Sensor device, input device, and electronic apparatus

ABSTRACT

The sensor device includes a first conductive layer, a second conductive layer, an electrode substrate, a first support, and a second support. The first conductive layer is formed to be deformable sheet-shaped. The second conductive layer is disposed to be opposed to the first conductive layer. The electrode substrate includes multiple first electrode wires and multiple second electrode wires and is disposed to be deformable between the first conductive layer and the second conductive layer, the multiple second electrode wires being disposed to be opposed to the multiple first electrode wires and intersecting with the multiple first electrode wires. The first support includes multiple first structures, the multiple first structures connecting the first conductive layer and the electrode substrate. The second support includes multiple second structures, the multiple second structures connecting the second conductive layer and the electrode substrate.

TECHNICAL FIELD

The present technology relates to a sensor device, an input device, andan electronic apparatus that are capable of electrostatically detectingan input operation.

BACKGROUND ART

As a sensor device for an electronic apparatus, for example, there isknown a configuration including a capacitive element and being capableof detecting an operation position and a pressing force of an operatingelement with respect to an input operation surface (see, for example,Patent Document 1).

Patent Document 1: Japanese Patent Application Laid-open No. 2011-170659

SUMMARY OF INVENTION Problem to be Solved by the Invention

In recent years, an input method with a high degree of freedom has beenperformed by a gesture operation using the movement of fingers.Moreover, if a pressing force on an operation surface can be stablydetected with high accuracy, a greater diversity of input operations areexpected to be achieved.

In view of the circumstances as described above, it is an object of thepresent technology to provide a sensor device, an input device, and anelectronic apparatus that are capable of highly accurately detecting anoperation position and a pressing force.

Means for Solving the Problem

In order to achieve the object described above, according to anembodiment of the present technology, there is provided a sensor deviceincluding a first conductive layer, a second conductive layer, anelectrode substrate, a first support, and a second support.

The first conductive layer is formed to be deformable sheet-shaped.

The second conductive layer is disposed to be opposed to the firstconductive layer.

The electrode substrate includes multiple first electrode wires andmultiple second electrode wires, the multiple second electrode wiresbeing disposed to be opposed to the multiple first electrode wires andintersecting with the multiple first electrode wires, the electrodesubstrate being disposed to be deformable between the first conductivelayer and the second conductive layer and being capable ofelectrostatically detecting a change in distance from each of the firstconductive layer and the second conductive layer.

The first support includes multiple first structures and a first spaceportion, the multiple first structures connecting the first conductivelayer and the electrode substrate, the first space portion being formedbetween the multiple first structures.

The second support includes multiple second structures and a secondspace portion, the multiple second structures being each disposedbetween the first structures adjacent to each other and connecting thesecond conductive layer and the electrode substrate, the second spaceportion being formed between the multiple second structures.

According to the sensor device, a relative distance between each of thefirst and second conductive layers and the electrode substrate changeswhen the sensor device is pressed from above the first conductive layer.Based on the change in distance, an input operation such as a press canbe electrostatically detected. Therefore, the amount of capacitancechange with respect to the input operation can be increased, anddetection sensitivity can be enhanced. This makes it possible to detectnot only a conscious pressing operation but also a minute pressing forcewhen a contact operation is made, and thus the sensor device can also beused as a touch sensor.

Further, since the sensor device does not have a configuration in whichan operating element and each electrode wire of the electrode substrateis directly capacitively coupled, but performs an input operation viathe first conductive layer, even in the case of using a gloved finger oran operating element such as a fine-tipped stylus, the input operationcan be detected with high accuracy.

The electrode substrate may further include multiple detection portions,each of the multiple detection portions being formed in each ofintersection regions of the multiple first electrode wires and themultiple second electrode wires and having a capacitance variable inaccordance with a relative distance from each of the first conductivelayer and the second conductive layer.

This allows a detection of an input operation in a so-called mutualcapacitance system in which detection is performed based on the amountof capacitance change between the first and second electrode wires.Therefore, simultaneous detection at two or more positions in amulti-touch operation is easy to perform.

The multiple detection portions may be formed to be opposed to themultiple first structures.

With this, in the case where the first structure is displaced to thesecond conductive layer side by an input operation from above the firstconductive layer, the detection portion opposed to this first structureis also displaced to the second conductive layer side accordingly.Therefore, a relative distance between the detection portion and thesecond conductive layer can be easily changed, and detection sensitivitycan be improved.

Alternatively, the multiple detection portions may be formed to beopposed to the multiple second structures.

Due to the configuration described above, the second structure and thedetection portion are each opposed to the first space portion. Thisallows a relative distance between the first conductive layer and thedetection portion to be easily changed via the first space portion, anddetection sensitivity can be improved.

The first support may include a first frame, the first frame connectingthe first conductive layer and the electrode substrate and beingdisposed along a circumferential edge of the electrode substrate, andthe second support may include a second frame, the second frameconnecting the second conductive layer and the electrode substrate andbeing disposed to be opposed to the first frame.

The first and second frames reinforce the circumferential portion of theentire sensor device, so that the strength of the sensor device isimproved and handling performance can be enhanced.

Further, the second conductive layer may include a step portion.

This can enhance the rigidity of the second conductive layer and thestrength of the entire sensor device.

Further, in the sensor device according to one embodiment of the presenttechnology, the second structure is not limited to be disposed betweenthe first structures adjacent to each other. For example, the firststructures and the second structures may be disposed to be opposed toeach other.

With this, a region in which the first structures and the secondstructures are disposed to be opposed to (overlap) each other isdifficult to deform, and thus is a region having low detectionsensitivity. This allows detection sensitivity in the sensor device tobe controlled and the degree of freedom of the device configuration tobe enhanced.

Moreover, the electrode substrate is not limited to a configuration toelectrostatically detect a change in distance from each of the firstconductive layer and the second conductive layer. For example, a changein distance from each of the operating element made of a conductor andthe second conductive layer may be electrostatically detected.

Further, the first support is not limited to a configuration includingthe first space portion. Gaps between the multiple first structures maybe filled with an elastic material or the like.

Alternatively, the second support is not limited to a configurationincluding the second space portion. Gaps between the multiple secondstructures may be filled with an elastic material or the like.

Further, each of the multiple first electrode wires may include multiplefirst unit electrode bodies, the multiple first unit electrode bodieseach including multiple first sub-electrodes, each of the multiplesecond electrode wires may include multiple second unit electrodebodies, the multiple second unit electrode bodies each includingmultiple second sub-electrodes and being opposed to the multiple firstunit electrode bodies, and the electrode substrate may include a basematerial, the multiple first electrode wires and the multiple secondelectrode wires being disposed on the base material, and multipledetection portions in which the multiple first sub-electrodes of each ofthe first unit electrode bodies and the multiple second sub-electrodesof each of the second unit electrode bodies are opposed to each other inan in-plane direction of the electrode substrate.

With this, the first electrode wires and the second electrode wires areopposed to each other in the in-plane direction of the electrodesubstrate, to be capacitively coupled. This makes it possible to makethe electrode substrate thinner and achieve downsizing of the entiresensor device. Moreover, since the multiple first and secondsub-electrodes form the detection portions, the amounts of capacitivecoupling of the detection portions can be enhanced, and detectionsensitivity as a sensor device can be enhanced.

According to an embodiment of the present technology, there is providedan input device including an operation member, a first conductive layer(conductive layer), an electrode substrate, a first support, and asecond support.

The operation member is deformable sheet-shaped and includes a firstsurface and a second surface, the first surface receiving an operationby a user, the second surface being on the opposite side to the firstsurface.

The first conductive layer is disposed to be opposed to the secondsurface.

The electrode substrate includes multiple first electrode wires andmultiple second electrode wires, the multiple second electrode wiresbeing disposed to be opposed to the multiple first electrode wires andintersecting with the multiple first electrode wires, the electrodesubstrate being disposed to be deformable between the operation memberand the conductive layer and being capable of electrostaticallydetecting a change in distance from the first conductive layer.

The first support includes multiple first structures and a first spaceportion, the multiple first structures connecting the operation memberand the electrode substrate, the first space portion being formedbetween the multiple first structures.

The second support includes multiple second structures and a secondspace portion, the multiple second structures being each disposedbetween the first structures adjacent to each other and connecting theconductive layer and the electrode substrate, the second space portionbeing formed between the multiple second structures.

According to the input device, a relative distance between each of theoperation member and the conductive layer and the electrode substratechanges when the input device is pressed from above the operationmember. Based on the change in distance, an input operation such as apress can be electrostatically detected. Therefore, the amount ofcapacitance change based on the input operation can be increased, anddetection sensitivity can be enhanced. This allows the input device todetect not only a conscious pressing operation but also a minutepressing force when a contact operation is made, and thus to be used asan input device including a touch sensor.

The operation member may further include a second conductive layer thatis formed on the second surface.

The detection substrate may be capable of electrostatically detecting achange in distance from each of the first conductive layer and thesecond conductive layer.

This allows an input operation to be performed via a metal film, not bya configuration in which an operating element and each electrode wire ofthe electrode substrate is directly capacitively coupled, and thus evenin the case of using a gloved finger or an operating element such as afine-tipped stylus, an input operation can be detected with highaccuracy.

Moreover, the operation member may include a display unit.

As described above, the input device does not have a configuration inwhich the operating element and each electrode wire of the electrodesubstrate are directly capacitively coupled, and thus even in the casewhere a display unit including a conductive material is disposed betweenthe electrode substrate and the operating element, an input operationcan be detected with high accuracy. In other words, a configuration inwhich a sensor device is disposed on the back surface of the displayunit can be provided, and deterioration in display quality of thedisplay unit can be suppressed.

The operation member may include multiple key regions.

This allows the input device to be applied as a keyboard device.

Further, the electrode substrate may further include multiple detectionportions, each of the multiple detection portions being formed in eachof intersection regions of the multiple first electrode wires and themultiple second electrode wires and having a capacitance variable inaccordance with a relative distance from the conductive layer.

Moreover, the input device may further include a control unit that iselectrically connected to the electrode substrate and is capable ofgenerating information on an input operation with respect to each of themultiple key regions based on outputs of the multiple detectionportions.

This allows the input device to perform, by the control unit, controlcorresponding to a key region on which an input operation is made.

The multiple first structures may be disposed along boundaries betweenthe multiple key regions.

This can provide a configuration in which the key regions are opposed tothe first space portion. Therefore, the input operation in the keyregion can easily change a distance between the operation member and theelectrode substrate, and detection sensitivity of the input operationcan be enhanced.

Further, the multiple first electrode wires may be flat-plate-shapedelectrodes and may be disposed on the operation member side relative tothe multiple second electrode wires, and each of the multiple secondelectrode wires may include multiple electrode groups.

With this, the first electrode wires are connected to the ground tofunction as an electromagnetic shield. Therefore, without aconfiguration of a metal film or the like formed on the operationmember, it is possible to suppress intrusion of electromagnetic wavesfrom the outside of the electrode substrate, for example, and to enhancethe reliability of detection sensitivity.

Further, in the input device according to one embodiment of the presenttechnology, the second structure is not limited to be disposed betweenthe first structures adjacent to each other. For example, the firststructures and the second structures may be disposed to be opposed toeach other in the thickness direction of the input device.

Moreover, the electrode substrate is not limited to a configuration toelectrostatically detect a change in distance from each of the firstconductive layer and the second conductive layer. For example, a changein distance from each of the operating element made of a conductor andthe second conductive layer may be electrostatically detected.

Further, the first support is not limited to a configuration includingthe first space portion. Gaps between the multiple first structures maybe filled with an elastic material or the like. Alternatively, thesecond support is not limited to a configuration including the secondspace portion. Gaps between the multiple second structures may be filledwith an elastic material or the like.

According to an embodiment of the present technology, there is providedan input device including an operation member, a back plate, anelectrode substrate, a first support, and a second support.

The operation member is deformable sheet-shaped and includes a firstsurface, a second surface, and a conductive layer, the first surfacereceiving an operation by a user, the second surface being on theopposite side to the first surface, the conductive layer being formed onthe second surface.

The back plate is disposed to be opposed to the second surface.

The electrode substrate includes multiple first electrode wires andmultiple second electrode wires and is disposed to be deformable betweenthe operation member and the back plate, the multiple second electrodewires being disposed to be opposed to the multiple first electrode wiresand intersecting with the multiple first electrode wires.

The first support includes multiple first structures, the multiple firststructures connecting the operation member and the electrode substrate.

The second support includes multiple second structures, the multiplesecond structures connecting the back plate and the electrode substrate.

Further, the multiple second electrode wires may be flat-plate-shapedelectrodes and may be disposed on the back plate side relative to themultiple first electrode wires, and each of the multiple first electrodewires may include multiple electrode groups.

With this, the second electrode wires are connected to the ground tofunction as an electromagnetic shield. Therefore, if the back plate isnot a conductor, it is possible to suppress intrusion of electromagneticwaves from the outside of the electrode substrate, for example, and toenhance the reliability of detection sensitivity.

According to an embodiment of the present technology, there is providedan electronic apparatus including an operation member, a conductivelayer, an electrode substrate, a first support, a second support, and acontroller.

The operation member is deformable sheet-shaped and includes a firstsurface and a second surface, the first surface receiving an operationby a user, the second surface being on the opposite side to the firstsurface.

The conductive layer is disposed to be opposed to the second surface.

The electrode substrate includes multiple first electrode wires andmultiple second electrode wires, the multiple second electrode wiresbeing disposed to be opposed to the multiple first electrode wires andintersecting with the multiple first electrode wires, the electrodesubstrate being disposed to be deformable between the operation memberand the conductive layer and being capable of electrostaticallydetecting a change in distance from the conductive layer.

The first support includes multiple first structures and a first spaceportion, the multiple first structures connecting the operation memberand the electrode substrate, the first space portion being formedbetween the multiple first structures.

The second support includes multiple second structures and a secondspace portion, the multiple second structures being each disposedbetween the first structures adjacent to each other and connecting theconductive layer and the electrode substrate, the second space portionbeing formed between the multiple second structures.

The controller includes a control unit that is electrically connected tothe electrode substrate and is capable of generating information on aninput operation with respect to each of the multiple operation membersbased on an output of the electrode substrate.

Effect of the Invention

As described above, according to the present technology, it is possibleto highly accurately detect an operation position and a pressing force.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 A schematic cross-sectional view of an input device according toa first embodiment of the present technology.

FIG. 2 An exploded perspective view of the input device.

FIG. 3 A schematic cross-sectional view of a main part of the inputdevice.

FIG. 4 A block diagram of an electronic apparatus using the inputdevice.

FIG. 5 A schematic cross-sectional view showing configuration examplesof a conductive layer of the input device.

FIG. 6 A schematic view for describing a method of connecting a metalfilm of the input device and the conductive layer to a ground potential.

FIG. 7 A schematic view for describing a method of connecting a metalfilm according to a modified example and the conductive layer to aground potential.

FIG. 8 A schematic cross-sectional view for describing a configurationof a detection portion of the input device.

FIG. 9 A schematic cross-sectional view showing examples of a method offorming a first support of the input device.

FIG. 10 A schematic cross-sectional view showing an example of a methodof forming a second support of the input device.

FIG. 11 A schematic cross-sectional view showing a modified example of amethod of forming the first or second support.

FIG. 12 A schematic plan view showing arrangement examples of first andsecond structures and first and second electrode wires of the inputdevice.

FIG. 13 A schematic plan view showing arrangement examples of openingsof the conductive layer, the first and second structures, the first andsecond electrode wires.

FIG. 14 A schematic cross-sectional view showing a state of a forceapplied to the first and second structures when a point on the firstsurface of the input device is pressed downward in a Z-axis directionwith an operating element.

FIG. 15 A schematic cross-sectional view of a main part, showing anaspect of the input device when a point of the first surface above thefirst structure receives an operation by an operating element andshowing an example of output signals output from the detection portionsat that time.

FIG. 16 A schematic cross-sectional view of a main part, showing anaspect of the input device when the first surface receives an operationby the operating element and showing an example of output signals outputfrom the detection portions at that time, in which A shows a case wherethe operating element is a stylus, and B shows a case where theoperating element is a finger.

FIG. 17 A schematic cross-sectional view showing an example of mountingthe input device to an electronic apparatus.

FIG. 18 A schematic cross-sectional view showing a configuration of amodified example 1 of the input device shown in FIG. 1, in which anadhesion layer is partially formed.

FIG. 19 A view schematically showing a state where a flexible display(display unit) shown in FIG. 18 is attached to the entire surface of ametal film shown in the figure, the entire surface including the outercircumferential portion.

FIG. 20 A schematic cross-sectional view showing another configurationof a modified example 1 of the input device shown in FIG. 1, showing anexample in which an adhesion layer is formed in a predetermined planepattern.

FIG. 21 A schematic view showing examples of the plane pattern of theadhesion layer shown in FIG. 20.

FIG. 22 A schematic plan view showing a configuration example of thefirst and second electrode wires according to a modified example 2 ofthe input device shown in FIG. 1, in which A shows the first electrodewires, and B shows the second electrode wires.

FIG. 23 A schematic view showing shape examples of unit electrode bodiesof the first and second electrode wires shown in FIG. 22.

FIG. 24 A schematic plan view showing arrangement examples of the firstand second structures and the first and second electrode wires accordingto a modified example 3 of the input device shown in FIG. 1.

FIG. 25 A schematic cross-sectional view of a main part, showing anaspect of the input device when the first surface of the input device ofFIG. 24 receives an operation by the operating element.

FIG. 26 A schematic cross-sectional view showing a configuration of amodified example 4 of the input device shown in FIG. 1.

FIG. 27 A schematic cross-sectional view of a main part, showing aconfiguration example 2 of a modified example 5 of the input deviceshown in FIG. 1.

FIG. 28 A schematic cross-sectional view of a main part, showing aconfiguration example 3 of the modified example 5 of the input deviceshown in FIG. 1.

FIG. 29 A schematic cross-sectional view of a main part, showing aconfiguration example 4 of the modified example 5 of the input deviceshown in FIG. 1.

FIG. 30 A schematic cross-sectional view of a main part, showing aconfiguration example 5 of the modified example 5 of the input deviceshown in FIG. 1.

FIG. 31 A schematic cross-sectional view of an input device according toa second embodiment of the present technology.

FIG. 32 A schematic cross-sectional view showing a configuration exampleof an operation member of the input device.

FIG. 33 An enlarged cross-sectional view showing a configuration of amodified example of the input device shown in FIG. 31.

FIG. 34 A plan view showing an arrangement example of first and secondstructures of the input device shown in FIG. 33, in which A shows thefirst structures and B shows the second structures.

FIG. 35 A plan view showing a configuration example of multiple firstand second electrode wires of the input device shown in FIG. 33, inwhich A shows the first electrode wires and B shows the second electrodewires.

FIG. 36 An enlarged plan view showing an arrangement example of firstand second structures shown in FIG. 34.

FIG. 37 A schematic cross-sectional view of an electronic apparatus inwhich an input device according to a third embodiment of the presenttechnology is incorporated.

FIG. 38 A view showing a configuration of an input device according to afourth embodiment of the present technology, in which A is a schematiccross-sectional view and B is an enlarged cross-sectional view showingthe main part of A.

FIG. 39 A schematic plan view showing a configuration example of firstand second electrode wires of the input device shown in FIG. 38, inwhich A shows the first electrode wires and B shows the second electrodewires.

FIG. 40 A is a plan view showing an array of the first and secondelectrode wires of the input device shown in FIG. 38, and B is across-sectional view when viewed from the A-A direction of A.

FIG. 41 A schematic cross-sectional view for describing a configurationof detection portions shown in FIG. 38.

FIG. 42 A schematic cross-sectional view of an input device according toa configuration example of a fifth embodiment of the present technology.

FIG. 43 A schematic plan view showing an arrangement example of firstand second structures and first and second electrode wires of the inputdevice shown in FIG. 42.

FIG. 44 A schematic cross-sectional view of an input device according toanother configuration example of the fifth embodiment of the presenttechnology.

FIG. 45 A schematic plan view showing an arrangement example of firstand second structures and first and second electrode wires of the inputdevice shown in FIG. 44.

FIG. 46 A schematic plan view showing a configuration example of thefirst and second electrode wires according to a modified example of theinput device shown in FIG. 42, in which A shows the first electrodewires and B shows the second electrode wires.

FIG. 47 A schematic plan view showing a configuration example of firstand second electrode wires according to a modified example of the inputdevice shown in FIG. 44, in which A shows the first electrode wires andB shows the second electrode wires.

FIG. 48 A view showing a configuration of an input device according to amodified example of a sixth embodiment of the present technology, inwhich A is a perspective view and B is a cross-sectional view whenviewed from the B-B direction of A.

FIG. 49 A perspective view showing a configuration of a modified exampleof the input device shown in FIG. 48.

MODE(S) FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present technology will be describedwith reference to the drawings.

First Embodiment

FIG. 1 is a schematic cross-sectional view of an input device 100according to a first embodiment of the present technology. FIG. 2 is anexploded perspective view of the input device 100. FIG. 3 is a schematiccross-sectional view of a main part of the input device 100. FIG. 4 is ablock diagram of an electronic apparatus 70 using the input device 100.Hereinafter, a configuration of the input device 100 of this embodimentwill be described. It should be noted that in the figures, an X axis anda Y axis represent directions orthogonal to each other (in-planedirection of the input device 100), and a Z axis represents a directionorthogonal to the X axis and the Y axis (thickness direction or verticaldirection of the input device 100).

[Input Device]

The input device 100 includes a flexible display (display unit) 11 thatreceives an operation by a user and a sensor device 1 that detects theoperation of the user. The input device 100 is formed as a flexibletouch panel display, for example, and is incorporated into an electronicapparatus 70 that will be described later. The sensor device 1 and theflexible display 11 each have a flat-plate shape that extends in adirection perpendicular to the Z axis.

The flexible display 11 includes a first surface 110 and a secondsurface 120 on the opposite side to the first surface 110. The flexibledisplay 11 has a function as an input operation unit and a function as adisplay unit in the input device 100. In other words, the flexibledisplay 11 causes the first surface 110 to function as an inputoperation surface and a display surface and displays an imagecorresponding to an operation by the user from the first surface 110upward in a Z-axis direction. On the first surface 110, an imagecorresponding to a keyboard, a GUI (Graphical User Interface), and thelike are displayed. Examples of an operating element that performs anoperation with respect to the flexible display 11 include a finger fshown in FIG. 16B and a stylus s shown in FIG. 16A.

A specific configuration of the flexible display 11 is not particularlylimited. For example, as the flexible display 11, a so-called electronicpaper, an organic EL (electroluminescence) panel, an inorganic EL panel,a liquid crystal panel, or the like can be adopted. Additionally, thethickness of the flexible display 11 is also not particularly limited,and is approximately 0.1 mm to 1 mm, for example.

The sensor device 1 includes a metal film (first conductive layer orsecond conductive layer) 12, a conductive layer (second conductive layeror first conductive layer) 50, an electrode substrate 20, a firstsupport 30, and a second support 40. The sensor device 1 is disposed onthe second surface 120 side of the flexible display 11.

The metal film 12 is formed to have a deformable sheet shape. Theconductive layer 50 is disposed to be opposed to the metal film 12. Theelectrode substrate 20 includes multiple first electrode wires 210 andmultiple second electrode wires 220. The multiple second electrode wires220 are disposed to be opposed to the multiple first electrode wires 210and intersect with the multiple first electrode wires 210. The electrodesubstrate 20 is disposed to be deformable between the metal film 12 andthe conductive layer 50 and is capable of electrostatically detecting achange in distance from each of the metal film 12 and the conductivelayer 50. The first support 30 includes multiple first structures 310and a first space portion 330. The multiple first structures 310 connectthe metal film 12 and the electrode substrate 20. The first spaceportion 330 is formed between the multiple first structures 310. Thesecond support 40 includes multiple second structures 410 and a secondspace portion 430. The multiple second structures 410 are disposedbetween the multiple first structures 310 adjacent to each other andconnect the conductive layer 50 and the electrode substrate 20. Thesecond space portion 430 is formed between the multiple secondstructures 410.

The sensor device 1 (input device 100) according to this embodimentelectrostatically detects changes in distance between the metal film 12and the electrode substrate 20 and between the conductive layer 50 andthe electrode substrate 20 due to an input operation on the firstsurface 110 of the flexible display 11, to detect the input operation.The input operation is not limited to a conscious press (push) operationon the first surface 110 and may be a contact (touch) operation thereon.In other words, as will be described later, the input device 100 iscapable of detecting even a minute pressing force (for example,approximately several 10 g) that is applied by a general touchoperation, and is thus configured so as to enable a touch operationsimilar to that of a normal touch sensor.

The input device 100 includes a control unit 60. The control unit 60includes an arithmetic unit 61 and a signal generation unit 62. Thearithmetic unit 61 detects an operation by a user based on a capacitancechange of a detection portion 20 s. The signal generation unit 62generates an operation signal based on a result of the detection by thearithmetic unit 61.

The electronic apparatus 70 shown in FIG. 4 includes a controller 710.The controller 710 performs processing based on the operation signalgenerated by the signal generation unit 62 of the input device 100. Theoperation signal processed by the controller 710 is output, as an imagesignal, for example, to the flexible display 11. The flexible display 11is connected to a drive circuit via a flexible wiring substrate 113 (seeFIG. 2), the drive circuit being mounted in the controller 710. Thedrive circuit may be mounted on the wiring substrate 113.

The flexible display 11 is formed as a part of an operation member 10 ofthe input device 100 in this embodiment. In other words, the inputdevice 100 includes the operation member 10, the electrode substrate 20,the first support 30, the second support 40, and the conductive layer50. Hereinafter, those elements will be described.

(Operation Member)

The operation member 10 has a laminate structure of the flexible display11 and the metal film 12, the flexible display 11 including the firstsurface 110 and the second surface 120. In other words, the operationmember 10 includes the first surface 110 and the second surface 120 andis formed to have a deformable sheet shape. The first surface 110receives an operation by a user. The second surface 120 is the oppositeside to the first surface 110 and is provided with the metal film 12.

The metal film 12 is formed to have a sheet shape that is deformablefollowing the deformation of the flexible display 11. The metal film 12is formed of a mesh material or metal foil that is made of, for example,Cu (copper), Al (aluminum), or steel use stainless (SUS). The thicknessof the metal film 12 is not particularly limited and is several 10 nm toseveral 10 μm, for example. The metal film 12 is connected to a groundpotential, for example. The metal film only needs to function as aconductive layer, and is not limited to metal. For example, the metalfilm may be an oxide conductor such as ITO (indium tin oxide) or anorganic conductor such as carbon nanotube. This allows the metal film 12to exert a function as an electromagnetic shield layer when mounted inthe electronic apparatus 70. In other words, it is possible to suppressintrusion of electromagnetic waves from other electronic componentsmounted in the electronic apparatus 70 and leakage of electromagneticwaves from the input device 100, for example, and contribute tooperation stability as the electronic apparatus 70. It should be notedthat the metal film 12 may include multiple layers each connected to theground potential (see FIG. 7). This can strengthen the function as theelectromagnetic shield layer.

For example, as shown in FIG. 3, a viscous adhesion layer 13 on whichmetal foil is formed is attached to the flexible display 11, thusforming the metal film 12. The material of the adhesion layer 13 is notparticularly limited as long as it has viscosity, but may be a resinfilm to which a resin material is applied. Alternatively, the metal film12 may be formed of a deposited film, a sputtering film, or the likethat is directly formed on the flexible display 11, or may be a coatingfilm of a conductive paste or the like that is printed on the surface ofthe flexible display 11. Further, a non-conductive film may be formed onthe surface of the film metal film 12. Examples of the non-conductivefilm include a hardcoat layer resistant to scratches and an antioxidantfilm resistant to corrosion.

(Conductive Layer)

The conductive layer 50 forms the lowermost portion of the input device100 and is disposed to be opposed to the metal film 12 in the Z-axisdirection. The conductive layer 50 also functions as, for example, asupport plate of the input device 100 and is formed so as to have ahigher bending rigidity than that of the operation member 10 and theelectrode substrate 20, for example. The conductive layer 50 may beformed of a metal plate including, for example, an Al alloy, an Mg(magnesium) alloy, or other metal materials or may be formed of aconductive plate made of a carbon-fiber-reinforced plastic or the like.Alternatively, the conductive layer 50 may have a laminate structure inwhich a conductive film such as a plating film, a deposited film, asputtering film, and metal foil is formed on an insulating layer made ofa plastic material or the like. Further, the thickness of the conductivelayer 50 is not particularly limited and is approximately 0.3 mm, forexample.

FIG. 5A to E is a schematic cross-sectional view showing configurationexamples of the conductive layer 50. The conductive layer 50 is notlimited to an example formed into a flat-plate shape as shown in FIG. 5Aand may include step portions 51 shown in FIGS. 5B, C, and E.Alternatively, the conductive layer 50 may be formed into a meshprovided with openings 50 h.

For example, a conductive layer 50B shown in FIG. 5B includes stepportions 51B. The step portions 51B are each formed by bending acircumferential portion upward in the Z-axis direction. Conductivelayers 50C shown in FIG. 5C, E include step portions 51C and 51E,respectively. The step portions 51C and 51E are formed at the centerportion and recessed downward. Such step portions 51 can enhance bendingrigidity of the conductive layer 50 in the Z-axis direction.

Further, conductive layers 50E shown in FIG. 5D, E are provided with oneor multiple openings 50 h. Providing the openings 50 h to the conductivelayer 50 in such a manner can enhance radiation performance whilemaintaining rigidity. Therefore, it is possible to suppress defects ofthe input device 100 and to enhance reliability. Further, the openings50 h can decrease the volume of the conductive layer 50 and reduce theweight of the input device 100. Furthermore, the openings 50 h canfacilitate air to flow when the volume of the second space portion 430is changed by deformation, and thus a response time of the electrodesubstrate 20 is shortened. Here, the response time refers to time fromtime when a load applied to the operation member 10 is changed to timewhen the volume of the sensor device 1 is actually changed.

Examples of the shape of the opening 50 h in plan view may includemulti-angular shapes such as a triangle and a square, circular shapes,elliptical shapes, oval shapes, indeterminate shapes, and slit-likeshapes. Those shapes may be used independently or in combination of twoor more of them.

Further, in the case where the conductive layer 50 is provided with themultiple openings 50 h, an arrangement pattern of the multiple openings50 h is not particularly limited, but may be a regular pattern, forexample. This can make detection sensitivity more uniform. Further, theregular pattern describe above may be a one-dimensional array or atwo-dimensional array, and may be mesh-like, for example, as shown inFIG. 5D. Alternatively, the multiple openings 50 h may be formed into astripe shape or may be formed to have a geometric pattern as a whole.

The openings 50 h are provided at positions or in regions that are notopposed to any of the multiple second structures 410, for example. Inother words, the openings 50 h and the second structures 410 areprovided to be displaced in an in-plane (in-XY plane) direction so asnot to overlap in the Z-axis direction (in the thickness direction ofthe input device 100). This allows the electrode substrate 20 and theconductive layer 50 to be stably connected to each other via the secondstructures 410.

The conductive layer 50 is connected to the ground potential, forexample. The conductive layer 50 thus exerts the function as anelectromagnetic shield layer when mounted in the electronic apparatus70. In other words, for example, it is possible to suppress intrusion ofelectromagnetic waves from other electronic components and the like thatare mounted in the electronic apparatus 70 and leakage ofelectromagnetic waves from the input device 100, and contribute tooperation stability as the electronic apparatus 70. Further, using thefollowing connection method can enhance the electromagnetic shieldfunction more.

(Method of Connecting Metal Film and Conductive Layer to GroundPotential)

FIG. 6 is a schematic view for describing a method of connecting themetal film 12 and the conductive layer 50 to a ground potential. Asshown in FIG. 6, the metal film 12 and the conductive layer 50 areconnected to, for example, a ground of the control unit 60 of the inputdevice 100 and a ground of the controller 710 of the electronicapparatus 70.

Here, the flexible display 11 is described as an example of a devicethat has an influence on the detection sensitivity of the sensor device1. If the metal film 12 and the conductive layer 50 are connected toonly the ground of the control unit 60, the flexible display 11 has apossibility of affecting the ground potential of the control unit 60 andinhibiting an electromagnetic shield effect from being sufficientlyexerted. In this regard, the metal film 12 and the conductive layer 50are connected to the ground of the controller 710 to which the flexibledisplay 11 is connected, and thus it is possible to keep the groundpotential more stable and enhance the electromagnetic shield effect.Further, as shown in the figure, connecting the metal film 12 and theconductive layer 50 at more contact points can also enhance theelectromagnetic shield effect.

Alternatively, as shown in FIG. 7, the metal film 12 may be formed ofmultiple layers. In the example shown in the figure, the metal film 12includes a first metal film 12 a on the flexible display 11 side and asecond metal film 12 b on the electrode substrate 20 side. This allowsthe first metal film 12 a to be connected to the ground of thecontroller 710 and the second metal film 12 b to be connected to onlythe control unit 60, for example. Alternatively, the second metal film12 b may be connected to both the control unit 60 and the controller710. This can also enhance the electromagnetic shield effect.

(Electrode Substrate)

The electrode substrate 20 is formed as a laminate of a first wiringsubstrate 21 and a second wiring substrate 22. The first wiringsubstrate 21 includes the first electrode wires 210. The second wiringsubstrate 22 includes the second electrode wires 220.

The first wiring substrate 21 includes a first base material 211 (seeFIG. 2) and the multiple first electrode wires (X electrodes) 210. Thefirst base material 211 is formed of a sheet material havingflexibility, for example. Specifically, the first base material 211 isformed of a plastic sheet (film) having electrical insulation property,which is made of PET, PEN, PC, PMMA, polyimide, or the like. Thethickness of the first base material 211 is not particularly limited andis several 10 μm to several 100 μm, for example.

The multiple first electrode wires 210 are integrally provided to onesurface of the first base material 211. The multiple first electrodewires 210 are arrayed at predetermined intervals along an X-axisdirection and formed substantially linearly along a Y-axis direction.The first electrode wires 210 are drawn out to an edge portion and thelike of the first base material 211 and connected to respectivedifferent terminals. Additionally, the first electrode wires 210 areelectrically connected to the control unit 60 via those terminals.

It should be noted that the multiple first electrode wires 210 may beeach formed of a single electrode wire or may be formed of multipleelectrode groups 21 w arrayed along the X-axis direction (see FIG. 12).Additionally, multiple electrode wires that form each of the electrodegroups 21 w may be connected to a common terminal or may be connected totwo or more different terminals.

On the other hand, the second wiring substrate 22 includes a second basematerial 221 (see FIG. 2) and the multiple second electrode wires (Yelectrodes) 220. The second base material 221 is formed of a sheetmaterial having flexibility, for example, similarly to the first basematerial 211. Specifically, the second base material 221 is formed of aplastic sheet (film) having electrical insulation property, which ismade of PET, PEN, PC, PMMA, polyimide, or the like. The thickness of thesecond base material 221 is not particularly limited and is several 10μm to several 100 μm, for example. The second wiring substrate 22 isdisposed to be opposed to the first wiring substrate 21.

The multiple second electrode wires 220 are formed similarly to themultiple first electrode wires 210. In other words, the multiple secondelectrode wires 220 are integrally provided to one surface of the secondbase material 221, arrayed at predetermined intervals along the Y-axisdirection, and formed substantially linearly along the X-axis direction.Additionally, the multiple second electrode wires 220 may be each formedof a single electrode wire or may be formed of multiple electrode groups22 w arrayed along the Y-axis direction (see FIG. 12).

The second electrode wires 220 are drawn out to an edge portion and thelike of the second base material 221 and connected to respectivedifferent terminals. Multiple electrode wires that form each of theelectrode groups 22 w may be connected to a common terminal or may beconnected to two or more different terminals. Additionally, the secondelectrode wires 210 are electrically connected to the control unit 60via those terminals.

The first electrode wires 210 and the second electrode wires 220 may beformed by a method of printing the conductive paste and the like, suchas screen printing, gravure offset printing, and ink-jet printing, ormay be formed by a patterning method using photolithography technologyof metal foil or a metal layer. Additionally, the first and second basematerials 211 and 221 are each formed of a sheet having flexibility, andthus the electrode substrate 20 can have flexibility as a whole.

As shown in FIG. 3, the electrode substrate 20 includes an adhesionlayer 23 that bonds the first wiring substrate 21 and the second wiringsubstrate 22 to each other. The adhesion layer 23 has electricalinsulation property and is formed of, for example, a hardened materialof an adhesive, or a pressure-sensitive material such as apressure-sensitive tape.

With such a configuration, the first electrode wires 210 are disposed tobe opposed to the second electrode wires 220 in the thickness directionof the electrode substrate 20, that is, the Z-axis direction.Additionally, the electrode substrate 20 includes the multiple detectionportions 20 s that are formed in regions where the first electrode wires210 and the second electrode wires 220 intersect.

FIG. 8A is a schematic cross-sectional view for describing aconfiguration of the detection portion 20 s. The detection portion 20 sis formed of a capacitive element in a mutual capacitance system, thecapacitive element including the first electrode wire 210, the secondelectrode wire 220 opposed to the first electrode wire 210 in the Z-axisdirection, and a dielectric layer provided between the first and secondelectrode wires 210 and 220. It should be noted that in FIGS. 8A and B,the first and second electrode wires 210 and 220 are each assumed to beformed of a single electrode wire.

FIG. 8A shows an example in which the first electrode wires 210 (210 x1, 210 x 2, 210 x 3) are disposed to be opposed to the second electrodewire 220 (220 y) in the Z-axis direction. In the example shown in FIG.8A, the first wiring substrate 21 and the second wiring substrate 22 arebonded to each other by the adhesion layer 23, and the first basematerial 211 of the first wiring substrate 21 and the adhesion layer 23form the dielectric layer described above. In this case, detectionportions 20 s 1, 20 s 2, and 20 s 3 are formed at intersection regionswhere the first electrode wires 210 x 1, 210 x 2, and 210 x 3 and thesecond electrode wire 220 y are capacitively-coupled, respectively.Capacitances C1, C2, and C3 of the detection portions 20 s 1, 20 s 2,and 20 s 3, respectively, are changed in accordance with capacitivecoupling between each of the metal film 12 and the conductive layer 50and the first electrode wires 210 x 1, 210 x 2, and 210 x 3 and thesecond electrode wire 220 y. It should be noted that an initialcapacitance of the detection portion 20 s is set by, for example, afacing area between the first and second electrode wires 210 and 220, afacing distance between the first and second electrode wires 210 and220, and a dielectric constant of the adhesion layer 23.

Further, FIG. 8B shows a modified example of the configuration of thedetection portions 20 s, in which first electrode wires 210D (210Dx1,210Dx2, and 210Dx3) and second electrode wires 220D (220Dy1, 220Dy2, and220Dy3) are disposed in the same plane on a first base material 211D andare capacitively-coupled in the XY plane. In this case, the firstelectrode wires 210D and the second electrode wires 220D are disposed tobe opposed to each other in the in-plane direction of the electrodesubstrate 20 (for example, in the X-axis direction), and for example,the first base material 211D forms a dielectric layer of the detectionportions 20Ds (20Ds1, 20Ds2, and 20Ds3). In such an arrangement,capacitances C11, C12, and C13 of the detection portions 20Ds1, 20Ds2,and 20Ds3, respectively, are formed to be variable according to thecapacitive coupling between each of the metal film 12 and the conductivelayer 50 and the first and second electrode wires 210Dx and 220Dy.Additionally, in the configuration described above, the second basematerial and the adhesion layer become unnecessary, which can contributeto a reduction in thickness of the input device 100.

In this embodiment, the multiple detection portions 20 s are disposed tobe opposed to the respective first structures 310, which will bedescribed later, in the Z-axis direction. Alternatively, the multipledetection portions 20 s may be disposed to be opposed to the respectivesecond structures 410, which will be described later, in the Z-axisdirection. Further, in this embodiment, the first wiring substrate 21 islaminated to be an upper surface of the second wiring substrate 22, butthe first wiring substrate 21 is not limited thereto. The second wiringsubstrate 22 may be laminated to be an upper surface of the first wiringsubstrate 21.

(Control Unit)

The control unit 60 is electrically connected to the electrode substrate20. More specifically, the control unit 60 is connected to the multiplefirst and second electrode wires 210 and 220 via terminals. The controlunit 60 forms a signal processing circuit that is capable of generatinginformation on an input operation with respect to the first surface 110based on output of the multiple detection portions 20 s. The controlunit 60 acquires the amount of capacitance change of each of thedetection portions 20 s while scanning the detection portions 20 s atpredetermined cycles, and generates information on the input operationbased on the amount of capacitance change.

The control unit 60 is typically formed of a computer including aCPU/MPU, a memory, and the like. The control unit 60 may be formed of asingle chip component or may be formed of multiple circuit components.The control unit 60 may be mounted to the input device 100 or to theelectronic apparatus 70 in which the input device 100 is incorporated.In the former case, for example, the control unit 60 is mounted on theflexible wiring substrate connected to the electrode substrate 20. Inthe latter case, the control unit 60 may be formed integrally with thecontroller 710 that controls the electronic apparatus 70.

The control unit 60 includes the arithmetic unit 61 and the signalgeneration unit 62 as described above and executes various functionsaccording to a program stored in a storage unit (not shown). Thearithmetic unit 61 calculates an operation position in an XY coordinatesystem on the first surface 110 based on an electrical signal (inputsignal) that is output from each of the first and second electrode wires210 and 220 of the electrode substrate 20. The signal generation unit 62generates an operation signal based on a result of the calculation. Thisallows an image, which is based on the input operation on the firstsurface 110, to be displayed on the flexible display 11.

The arithmetic unit 61 shown in FIGS. 3 and 4 calculates XY coordinatesof the operation position on the first surface 110 by the operatingelement based on an output from each of the detection portions 20 s towhich unique XY coordinates are assigned. Specifically, the arithmeticunit 61 calculates the amount of capacitance change in each detectionportion 20 s based on the amount of capacitance change acquired fromeach of the X electrodes 210 and the Y electrodes 220, each detectionportion 20 s being formed in the intersection region of each X electrode210 and each Y electrode 220. Using a ratio of the amount of capacitancechange of each detection portion 20 s, for example, the XY coordinatesof the operation position by the operating element can be calculated.

Additionally, the arithmetic unit 61 can determine whether the firstsurface 110 is receiving an operation or not. Specifically, for example,in the case where the amount of capacitance change of the whole of thedetection portions 20 s, the amount of capacitance change of eachdetection portion 20 s, or the like is a predetermined threshold valueor more, the arithmetic unit 61 can determine that the first surface 110is receiving an operation. Further, with two or more threshold valuesbeing provided, it is possible to distinguish between a touch operationand a (conscious) push operation for determination, for example.Moreover, a pressing force can also be calculated based on the amount ofcapacitance change of the detection portion 20 s.

The arithmetic unit 61 can output those calculation results to thesignal generation unit 62.

The signal generation unit 62 generates a predetermined operation signalbased on the calculation results of the arithmetic unit 61. Theoperation signal may be, for example, an image control signal forgenerating a displayed image to be output to the flexible display 11, anoperation signal corresponding to a key of a keyboard image displayed atthe operation position on the flexible display 11, or an operationsignal on an operation corresponding to a GUI (Graphical UserInterface).

Here, the input device 100 includes the first and second supports 30 and40 as a configuration to cause a change in distance between each of themetal film 12 and the conductive layer 50 and the electrode substrate 20(detection portion 20 s) by an operation on the first surface 110.Hereinafter, the first and second supports 30 and 40 will be described.

(Basic Configuration of First and Second Supports)

The first support 30 is disposed between the operation member 10 and theelectrode substrate 20. The first support 30 includes the multiple firststructures 310, a first frame 320, and the first space portion 330. Inthis embodiment, the first support 30 is bonded to the electrodesubstrate 20 via an adhesion layer 35 (see FIG. 3). The adhesion layer35 may be an adhesive or may be formed of a pressure-sensitive materialsuch as a pressure-sensitive adhesive and a pressure-sensitive tape.

As shown in FIG. 3, the first support 30 according to this embodimentincludes a laminate structure including a base material 31, a structurelayer 32 provided on the surface (upper surface) of the base material31, and multiple bonding portions 341 formed at predetermined positionson the structure layer 32. The base material 31 is formed of a plasticsheet having electrical insulation property, which is made of PET, PEN,PC, or the like. The thickness of the base material 31 is notparticularly limited and is several μm to several 100 μm, for example.

The structure layer 32 is formed of a resin material having electricalinsulation property, which is made of a UV resin or the like. Thestructure layer 32 includes multiple first convex portions 321, a secondconvex portion 322, and a concave portion 323 on the base material 31.The first convex portions 321 each have a shape such as a columnarshape, a rectangular columnar shape, and a frustum shape protruding inthe Z-axis direction, for example, and are arrayed at predeterminedintervals on the base material 31. The second convex portion 322 isformed to have a predetermined width so as to surround the circumferenceof the base material 31.

Additionally, the structure layer 32 is made of a material that hasrelatively high rigidity and is capable of deforming the electrodesubstrate 20 by an input operation on the first surface 110, but may bemade of an elastic material that is deformable together with theoperation member 10 at the time of the input operation. In other words,an elastic modulus of the structure layer 32 is not particularly limitedand can be selected as appropriate within a range capable of obtaining atarget operational feeling or detection sensitivity.

The concave portion 323 is formed of a flat surface that is formedbetween the first and second convex portions 321 and 322. In otherwords, a spatial region above the concave portion 323 forms the firstspace portion 330. Additionally, above the concave portion 323, in thisembodiment, an adhesion prevention layer 342 made of a UV resin or thelike having low viscosity is formed (not shown in FIG. 3). The shape ofthe adhesion prevention layer 342 is not particularly limited and may bean island shape or may be formed in a flat film on the concave portion323.

Further, the bonding portions 341 each made of a viscous resin materialor the like are formed on the respective first and second convexportions 321 and 322. In other words, each of the first structures 310is formed as a laminate of the first convex portion 321 and the bondingportion 341 formed thereon. Each first frame 320 is formed as a laminateof the second convex portion 322 and the bonding portion 341 formedthereon. This makes the thickness (height) of the first structures 310and the first frame 320 substantially the same, and the thickness(height) falls within a range of, for example, several μm to several 100μm in this embodiment. It should be noted that the height of theadhesion prevention layer 342 is not particularly limited as long as theheight is lower than the first structures 310 and the first frame 320.For example, the height of the adhesion prevention layer 342 is formedto be lower than the first and second convex portions 321 and 322.

The multiple first structures 310 are disposed to correspond to thearrangement of the detection portions 20 s. In this embodiment, themultiple first structures 310 are disposed to be opposed to the multipledetection portions 20 s in the Z-axis direction, for example.

On the other hand, the first frame 320 is formed so as to surround thecircumference of the first support 30 along the circumferential edge ofthe electrode substrate 20. The length in a short-side direction, thatis, the width of the first frame 320 is not particularly limited as longas the strength of the first support 30 and the entire input device 100can be sufficiently ensured.

On the other hand, the second support 40 is disposed between theelectrode substrate 20 and the conductive layer 50. The second support40 includes the multiple second structures 410, a second frame 420, andthe second space portion 430.

As shown in FIG. 3, the second support 40 according to this embodimentincludes the second structures 410 and the second frame 420 that areformed directly on the conductive layer 50. The second structures 410and the second frame 420 are each made of an insulating resin materialhaving viscosity, for example, and also have function of bondingportions that bond the conductive layer 50 and the electrode substrate20. The thickness of the second structures 410 and the second frame 420is not particularly limited and is several μm to several 100 μm, forexample.

The second structures 410 are each disposed between the first structures310 adjacent to each other. In other words, the second structures 410are disposed to correspond to the arrangement of the detection portions20 s, and in this embodiment, disposed between the detection portions 20s adjacent to each other. On the other hand, the second frame 420 isformed so as to surround the circumference of the second support 40along the circumferential edge of the conductive layer 50. The width ofthe second frame 420 is not particularly limited as long as the strengthof the second support 40 and the entire input device 100 can besufficiently ensured. For example, the width is formed to have a widthsubstantially the same as that of the first frame 320.

Additionally, in the second structures 410, the elastic modulus is notparticularly limited as in the structure layer 32 that forms the firststructures 310. In other words, the elastic modulus can be selected asappropriate within a range capable of obtaining a target operationalfeeling or detection sensitivity, and the second structures 410 may bemade of an elastic material that is deformable together with theelectrode substrate 20 at the time of the input operation.

Further, the second space portion 430 is formed between the secondstructures 410 and form a spatial region around the second structures410 and the second frame 420. In this embodiment, the second spaceportion 430 houses the detection portions 20 s and the first structures310 when viewed in the Z-axis direction.

The first and second supports 30 and 40 configured as described aboveare formed as follows.

(Method of Forming First and Second Supports)

FIGS. 9A, B, C is a schematic cross-sectional view showing examples of amethod of forming the first support 30. First, a UV resin is disposed ona base material 31 a, and a predetermined pattern is formed on theresin. With this pattern, as shown in FIG. 9A, a structure layer 32 aincluding multiple first and second convex portions 321 a and 322 a andconcave portions 323 a is formed. As the UV resin described above, asolid sheet material or a liquid UV curable material may be used.Further, a method of forming a pattern is not particularly limited. Forexample, using a roll-shaped die having a predetermined concavo-convexpattern, a method of transferring the concavo-convex pattern of the dieto the UV resin and curing the UV resin with UV application from theside of the base material 31 a can be applied. Further, in addition tothe shaping using the UV resin, for example, general thermoforming (forexample, press forming or injection molding) or discharge of a resinmaterial using a dispenser or the like may be adopted.

Next, with reference to FIG. 9B, a UV resin or the like having lowadhesiveness is applied to the concave portions 323 a in a predeterminedpattern by a screen printing method, for example, to form an adhesionprevention layer 342 a. This can prevent the metal film 12 disposed onthe first support 30 and the concave portion 323 from adhering to eachother, in the case where the resin material that forms the structurelayer 32 a has high adhesiveness, for example. It should be noted thatthe adhesion prevention layer 342 a may not be formed in the case wherethe resin material that forms the structure layer 32 a has lowadhesiveness.

Further, with reference to FIG. 9C, bonding portions 341 a made of a UVresin or the like having high adhesiveness are formed on the convexportions 321 a by a screen printing method, for example. The bondingportions 341 a bond the first support 30 and the metal film 12. By theforming method described above, the first structures 310 and the firstframe 320 having predetermined shapes can be formed.

On the other hand, FIG. 10 is a schematic cross-sectional view showingan example of a method of forming the second support 40. In FIG. 10, aUV resin or the like having high adhesiveness is directly applied onto aconductive layer 50 b in a predetermined pattern by a screen printingmethod, for example, to form second structures 410 b and a second frame420 b. This can reduce the number of processes to a large degree andenhance productivity.

The forming method described above is an example. For example, the firstsupport 30 may be formed by the method shown in FIG. 10, or the secondsupport 40 may be formed by the method shown in FIG. 9. Further, thefirst and second supports 30 and 40 can be formed by the followingmethod shown in FIG. 11.

FIGS. 11A, B is a schematic cross-sectional view showing a modifiedexample of the method of forming the first and second supports 30 and40. It should be noted that in FIG. 11, description will be given usingreference symbols corresponding to the first support 30. In FIG. 11A, aUV resin or the like is applied onto a base material 31C or the like ina predetermined pattern by a screen printing method, for example, toform first and second convex portions 311 c and 312 c. Further, on thefirst and second convex portions 311 c and 312 c, bonding portions 341 cmade of a UV resin or the like having high adhesiveness are formed by ascreen printing method, for example. Thus, the first structures 310(second structures 410) formed of the first convex portions 311 c andthe bonding portions 341 c, and the first frame 320 (or the second frame420) formed of the second convex portion 312 c and the bonding portion341 c can be formed.

Next, a planar arrangement of the first and second structures 310 and410 will be described while touching on a relationship between the firstand second electrode wires (X electrodes, Y electrodes) 210 and 220.

Arrangement Example of First and Second Structures

FIGS. 12A, B is a schematic plan view showing arrangement examples ofthe first and second structures 310 and 410 and the first electrodewires (X electrodes) 210 and the second electrode wires (Y electrodes)220. FIG. 12A, B shows an example in which each X electrode 210 and eachY electrode 220 have electrode groups 21 w and 22 w, respectively.Further, since each of the detection portions 20 s is formed in theintersection region of the X electrode 210 and the Y electrode 220 asdescribed above, for example, four detection portions 20 s surrounded bythick broken lines are disposed in FIGS. 12A, B. It should be noted thatblack circles shown in FIGS. 12A, B represent the first structures 310,and white circles represent the second structures 410.

FIG. 12A shows an example in which the number of first structures 310and the number of second structures 410 are substantially the same. Inother words, the first structure 310 is disposed at substantially thecenter of the detection portion 20 s. A pitch of the first structures310 in the X-axis direction and the Y-axis direction is the same as apitch of the detection portion 20 s in the X-axis direction and theY-axis direction. The pitch is P1. Further, the second structures 410are disposed in the pitch P1, which is the same in the first structures310, at regular intervals between the first structures 310 and betweenthe detection portions 20 s that are adjacent in an oblique directionforming approximately 45° with each of the X-axis and Y-axis directions.

Further, FIG. 12B shows an example in which the number of firststructures 310 and the number of second structures 410 are differentfrom each other. In other words, the first structures 310 are disposedin the pitch P1 at substantially the center of each detection portion 20s, as in the example shown in FIG. 12A. On the other hand, the secondstructures 410 are different from FIG. 12A in arrangement and number anddisposed in a pitch P2, which is ½ times of the pitch P1 of the firststructures 310. When viewed in the Z-axis direction, the secondstructures 410 are disposed so as to surround the circumferences of thefirst structures 310 and the detection portions 20 s. The secondstructures 410 are disposed in a larger number than the first structures310, and thus the strength of the entire input device 100 can beenhanced.

Further, the number and arrangement (pitch) of the first and secondstructures 310 and 410 are adjusted, and thus the amount of a change indistance between each of the metal film 12 and the conductive layer 50and the detection portion 20 s with respect to a pressing force can beadjusted so as to obtain a target operational feeling or detectionsensitivity.

Further, in the case where the conductive layer 50 includes the openings50 h, the openings 50 h, the first and second structures 310 and 410,and the first and second electrode wires 210 and 220 are disposed asfollows.

Arrangement Example of Openings of Conductive Layer

FIGS. 13A, B is a schematic plan view showing arrangement examples ofthe openings 50 h of the conductive layer 50, the first and secondstructures 310 and 410, and the first and second electrode wires 210 and220. Additionally, FIG. 13A shows an example of the openings 50 h eachhaving an oval shape, and FIG. 13B shows an example of the openings 50 heach having a circular shape. The multiple openings 50 h shown in FIGS.13A, B are disposed so as to surround the circumferences of thedetection portions 20 s when viewed in the Z-axis direction. Further,the multiple openings 50 h are provided to be displaced with respect tothe second structures 410 in the in-plane (in-XY plane) direction, so asnot to overlap any of the first and second structures 310 and 410 andthe detection portions 20 s in the Z-axis direction.

As shown in the figure, the openings 50 h are disposed at positions thatare not opposed to the detection portions 20 s, for example. In otherwords, the openings 50 h and the detection portions 20 s are provided tobe displaced in an in-plane (in-XY plane) direction so as not to overlapin the Z-axis direction. This can suppress an initial capacitance or achange ratio of capacitance of the detection portions 20 s from beingchanged and keep detection sensitivity in the input device 100 moreuniform, as compared with the case where the openings 50 h of theconductive layer 50 are disposed at positions opposed to the detectionportions 20 s.

The openings 50 h are disposed at cycles substantially the same as thedetection portions 20 s. For example, the openings 50 h are disposedsymmetrically with respect to the center of the detection portion 20 s.More specifically, the openings 50 h are disposed linearly symmetricallywith respect to the center line of each of the first and secondelectrode wires 210 and 220. This can also prevent the detectionsensitivity from being ununiform in the input device 100.

As described above, the first and second supports 30 and 40 according tothis embodiment have features: (1) including the first and secondstructures 310 and 410 and the first and second space portions 330 and430; and (2) the first structures 310 and the second structures 410 donot overlap each other when viewed in the Z-axis direction, and thefirst structures 310 are disposed above the second space portion 430.Therefore, as described later, the metal film 12 and the conductivelayer 50 can be deformed by a minute pressing force of approximatelyseveral 10 g at the time of operation.

(Operation of First and Second Supports)

FIG. 14 is a schematic cross-sectional view showing a state of a forceapplied to the first and second structures 310 and 410 when a point P onthe first surface 110 is pressed downward in the Z-axis direction withan operating element h. White arrows in the figure each schematicallyshow the magnitude of a force applied downward in the Z-axis direction(hereinafter, simply referred to as “downward”). In FIG. 14, aspectssuch as the deflection of the metal film 12, the electrode substrate 20,and the like and the elastic deformation of the first and secondstructures 310 and 410 are not shown. It should be noted that in thefollowing description, even in the case where a user makes a touchoperation without being conscious of a press, a minute pressing force isactually applied, and thus those input operations will be collectivelydescribed as “press”.

For example, in the case where a point P above a first space portion 330p 0 is pressed downward by a force F, the metal film 12 immediatelybelow the point P is deflected downward. Along with the deflection,first structures 310 p 1 and 310 p 2 adjacent to the first space portion330 p 0 receive a force F1 and are elastically deformed in the Z-axisdirection, and the thickness is slightly reduced. Further, due to thedeflection of the metal film 12, first structures 310 p 3 and 310 p 4adjacent to the first structures 310 p 1 and 310 p 2 also receive aforce F2 that is smaller than F1. Moreover, by the forces F1 and F2, aforce is applied to the electrode substrate 20 as well, and theelectrode substrate 20 is deflected downward centering on a regionimmediately blow the first structures 310 p 1 and 310 p 2. With thisdeflection, a second structure 410 p 0 disposed between the firststructures 310 p 1 and 310 p 2 receives a force F3 and is elasticallydeformed in the Z-axis direction, and the thickness is slightly reduced.Further, a second structure 410 p 1 disposed between the firststructures 310 p 1 and 310 p 3 and a second structure 410 p 2 disposedbetween the first structures 310 p 2 and 310 p 4 also each receive F4that is smaller than F3.

In such a manner, a force can be transmitted by the first and secondstructures 310 and 410 in the thickness direction, and the electrodesubstrate 20 can be easily deformed. Further, when the metal film 12 andthe electrode substrate 20 are deflected, and a pressing force has aninfluence in the in-plane direction (in a direction parallel to theX-axis direction and the Y-axis direction), the force can thus reach notonly the region immediately below the operating element h but also thefirst and second structures 310 and 410 adjacent to that region.

Further, regarding the feature (1) described above, the metal film 12and the electrode substrate 20 can be easily deformed by the first andsecond space portions 330 and 430. Further, with respect to the pressingforce of the operating element h, a high pressure can be applied to theelectrode substrate 20 by the first and second structures 310 and 410each formed of a prism or the like, and the electrode substrate 20 canbe efficiently deflected.

Further, regarding the feature (2) described above, since the first andsecond structures 310 and 410 are disposed so as not to overlap eachother when viewed in the Z-axis direction, the first structures 310 caneasily deflect the electrode substrate 20 via the second space portion430 provided below the first structures 310.

Hereinafter, description will be given on an example of the amount ofcapacitance change of the detection portion 20 s in a specificoperation.

Output Example of Detection Unit

FIGS. 15A, B is a schematic cross-sectional view of a main part, showingan aspect of the input device 100 when the first surface 110 receives anoperation by the operating element h and showing an example of outputsignals output from the detection portions 20 s at that time. Bar graphsshown along the X axis in FIGS. 15A, B each schematically show theamount of capacitance change from a reference value in each detectionportion 20 s. Further, FIG. 15A shows an aspect when the operatingelement h presses above a first structure 310 (310 a 2), and FIG. 15Bshows an aspect when the operating element h presses above a first spaceportion 330 (330 b 1).

In FIG. 15A, the first structure 310 a 2 immediately below the operationposition receives the largest force and is displaced downward whileelastically deforming the first structure 310 a 2 itself. Due to thedisplacement, a detection portion 20 sa 2 immediately below the firststructure 310 a 2 is displaced downward. This allows the detectionportion 20 sa 2 and the conductive layer 50 come close to each other viaa second space portion 430 a 2. In other words, the detection portion 20sa 2 obtains the amount of capacitance change Ca2 by a slight change indistance from the metal film 12 and a large change in distance from theconductive layer 50. On the other hand, due to the influence of thedeflection of the metal film 12, first structures 310 a 1 and 310 a 3are also slightly displaced downward, and the amounts of capacitancechange in detection portions 20 sa 1 and 20 sa 3 are Ca1 and Ca3.

In the example shown in FIG. 15A, Ca2 is the largest, and Ca1 and Ca3are substantially the same as each other and smaller than Ca2. In otherwords, as shown in FIG. 15A, the amounts of capacitance change Ca1, Ca2,and Ca3 show a distribution in chevron with a vertex of Ca2. In thiscase, the arithmetic unit 61 can calculate the center of gravity or thelike based on the ratio of Ca1, Ca2, and Ca3, to calculate XYcoordinates on the detection portion 20 sa 2 as an operation position.

On the other hand, in FIG. 15B, first structures 310 b 1 and 310 b 2 inthe vicinity of the operation position are slightly elastically deformedand displaced downward due to the deflection of the metal film 12. Dueto the displacement, the electrode substrate 20 is deflected, anddetection portions 20 sb 1 and 20 sb 2 immediately below the firststructures 310 b 1 and 310 b 2 are displaced downward. This allows thedetection portions 20 sb 1 and 20 sb 2 and the conductive layer 50 comeclose to each other via second space portions 430 b 1 and 430 b 2. Inother words, the detection portions 20 sb 1 and 20 sb 2 obtain theamounts of capacitance change Cb1 and Cb2, respectively, by a slightchange in distance from the metal film 12 and a large change in distancefrom the conductive layer 50.

In the example shown in FIG. 15B, Cb1 and Cb2 are substantially the sameas each other. The arithmetic unit 61 can thus calculate XY coordinatesbetween the detection portions 20 sb 1 and 20 sb 2 as an operationposition.

As described above, according to this embodiment, both of the thicknessbetween the detection portion 20 s and the metal film 12 and thethickness between the detection portion 20 s and the conductive layer 50are variable by the pressing force, and thus the amount of capacitancechange in the detection portion 20 s can be made larger. This canenhance the detection sensitivity of the input operation.

Further, even when the operation position on the flexible display 11 isany point on the first structure 310 or above the first space portion330, the XY coordinates of the operation position can be calculated. Inother words, the influence of the pressing force is spread in thein-plane direction by the metal film 12, and thus a capacitance changecan be generated in not only the detection portion 20 s immediatelybelow the operation position but also the detection portions 20 s in thevicinity of the operation position when viewed in the Z-axis direction.Thus, it is possible to suppress variations in detection accuracy in thefirst surface 110 and keep high detection accuracy on the entire firstsurface 110.

Here, a finger or a stylus is exemplified as an operating elementfrequently used. The feature of them is as follows: since the finger hasa larger contact area than the stylus, in the case where the same load(pressing force) is applied, the finger receives a smaller pressure(hereinafter, operation pressure) with respect to the pressing force. Onthe other hand, the stylus has a smaller contact area, and for example,in a capacitance sensor of a general mutual capacitance system, therearise problems that the amount of capacitive coupling to a sensorelement is small and the detection sensitivity is low. According to thisembodiment, the input operation can be detected with high accuracy withuse of any of the operating elements. Hereinafter, description will begiven with reference to FIGS. 16A, B.

FIGS. 16A, B is a schematic cross-sectional view of a main part, showingan aspect of the input device 100 when the first surface 110 receives anoperation by a stylus or a finger and showing an example of outputsignals output from the detection portions 20 s at that time. FIG. 16Ashows the case where the operating element is a stylus s, and FIG. 16Bshows the case where the operating element is a finger f. Additionally,bar graphs shown along the X axis in FIGS. 16A, B each schematicallyshow the amount of capacitance change from a reference value in eachdetection portion 20 s, as in FIGS. 15A, B.

As shown in FIG. 16A, the stylus s deforms the metal film 12 and alsoapplies a pressing force to a first structure 310 c 2 immediately belowthe operation position. Here, the stylus s has a small contact area, andthus can apply a large operation pressure to the metal film 12 and thefirst structure 310 c 2. For that reason, the metal film 12 can belargely deformed. As a result, a large capacitance change can begenerated as shown by the amount of capacitance change Cc2 of adetection portion 20 sc 2. Thus, the amounts of capacitance change Cc1,Cc2, and Cc3 of detection portions 20 sc 1, 20 sc 2, and 20 sc 3,respectively, have a distribution in chevron with a vertex of Cc2.

As described above, the input device 100 according to this embodimentcan detect the amount of capacitance change based on an in-planedistribution of the operation pressure. This is because the input device100 does not detect the amount of capacitance change by directcapacitive coupling to the operating element, but detects the amount ofcapacitance change via the deformable metal film 12 and electrodesubstrate 20. Therefore, even for the operating element such as thestylus s having a small contact area, the operation position and thepressing force can be detected with high accuracy.

On the other hand, as shown in FIG. 16B, since the finger f has a largecontact area, the operation pressure becomes small, but can directlydeform the metal film 12 in a wider range than the stylus s. This candisplace first structures 310 d 1, 310 d 2, and 310 d 3 downward andgenerate the amounts of capacitance change Cd1, Cd2, and Cd3 ofdetection portions 20 sd 1, 20 sd 2, and 20 sd 3, respectively. Cd1,Cd2, and Cd3 show a distribution in gradual chevron, as compared withCc1, Cc2, and Cc3 according to FIG. 16A.

The input device 100 according to this embodiment detects the amount ofcapacitance change based on both capacitive coupling between each of themetal film 12 and the conductive layer 50 and the detection portion 20 sas described above, and thus a sufficient capacitance change can begenerated even with an operating element such as the finger f having alarge contact area. Further, in the determination on whether anoperation has been performed or not, using a value obtained by addingthe amounts of capacitance change of all the detection portions 20 sd 1,20 sd 2, and 20 sd 3, in each of which a capacitance change isgenerated, for example, can lead to a highly accurate determination of acontact based on the pressing force of the entire first surface 110,even if the operation pressure is small. Moreover, since the capacitanceis changed based on an operation pressure distribution in the firstsurface 110, an operation position conforming to an intuition of theuser can be calculated based on a ratio of those change amounts or thelike.

Moreover, in the case of a general capacitance sensor, the operationposition and the like are detected using capacitive coupling between theoperating element and the X and Y electrodes. In other words, in thecase where a conductor is disposed between the operating element and theX and Y electrodes, it has been difficult to detect an input operationdue to capacitive coupling between the conductor and the X and Yelectrodes. Further, in a configuration in which a gap between theoperating element and the X and Y electrodes is thick, there has been aproblem that the amount of capacitive coupling therebetween is madesmall and the detection sensitivity is reduced. In view of thosecircumstances, it has been necessary to dispose a sensor device on adisplay surface of a display, and there has been a problem ofdeterioration of a display quality of the display.

Since the input device 100 (sensor device 1) according to thisembodiment uses the capacitive coupling between each of the metal film12 and the conductive layer 50 and the X and Y electrodes 210 and 220,even in the case where a conductor is disposed between the operatingelement and the sensor device, there is no influence on the detectionsensitivity. Further, the metal film 12 only needs to be deformable bythe pressing force of the operating element, and there are less limitson the thickness of the gap between the operating element and the X andY electrodes. Therefore, even in the case where the sensor device 1 isdisposed on the back surface of the flexible display 11, the operationposition and the pressing force can be detected with high accuracy, andthe deterioration in display characteristics of the flexible display 11can be suppressed.

Moreover, there are less limits on the thickness of an insulator(dielectrics) that exists between the operating element and the X and Yelectrodes, and thus even in the case where the user operates whilewearing gloves as an insulator, for example, the detection sensitivityis not reduced. Therefore, this can contribute to the improvement ofconvenience for the user.

[Electronic Apparatus]

FIGS. 17A, B is a view showing an example of mounting the input device100 according to this embodiment to the electronic apparatus 70. Anelectronic apparatus 70 a according to FIG. 17A includes a casing 720 aincluding an opening portion 721 a in which the input device 100 isdisposed. Further, the opening portion 721 a is provided with a supportportion 722 a, and the support portion 722 a supports a circumferentialportion of the conductive layer 50 via a bonding portion 723 a such as apressure-sensitive tape. Further, a method of bonding the conductivelayer 50 and the support portion 722 a is not limited to the abovemethod, and the conductive layer 50 and the support portion 722 a may befixed with screws, for example.

Further, in the input device 100 according to this embodiment, the firstand second frames 320 and 420 are formed along the circumferential edgethereof, and thus a stable strength can be kept at the time of mounting.

An electronic apparatus 70 b according to FIG. 17B also has aconfiguration that is substantially the same as that of the electronicapparatus 70 a. The electronic apparatus 70 b includes a casing 720 bincluding an opening portion 721 a and a support portion 722 a. Thedifference is in that the electronic apparatus 70 b includes at leastone auxiliary support portion 724 b that supports the back surface ofthe conductive layer 50. The auxiliary support portion 724 b may bebonded to the conductive layer 50 with a pressure-sensitive tape or thelike or may not be connected. The configuration described above cansupport the input device 100 more stably.

Modified Example 1

In the first embodiment described above, the metal film 12 is formed byattaching the adhesion layer 13 to the flexible display 11, the adhesionlayer 13 being a viscous resin film and including the metal foil formedthereon, but the metal film 12 is not limited thereto. For example, inthe case where the metal film 12 is metal foil without a resin film, forexample, the adhesion layer 13 may be a pressure-sensitive adhesive, anadhesive, or the like capable of attaching the metal film 12 to theflexible display 11.

In this case, the adhesion layer 13 may be provided to the entiresurface of the flexible display 11 as shown in FIG. 3. This allows themetal film 12 and the flexible display 11 to be tightly bonded to eachother in the entire plane, to obtain a uniform sensitivity.

On the other hand, FIGS. 18A, B is a schematic cross-sectional viewshowing a modified example in which the adhesion layer 13 is partiallyformed. As shown in FIG. 18A, the adhesion layer 13 may be formed inonly an outer circumferential portion of each of the flexible display 11and the metal film 12, and for example, may be formed in a region abovethe first frame 320 and the second frame 420. This allows the metal film12 and the flexible display 11 to be bonded to each other above thefirst frame 320 and the second frame 420, the first frame 320 and thesecond frame 420 each having a larger bond area in the Z-axis directionthan each of the first structures 310 and the second structures 410 andbeing disposed by lamination in the Z-axis direction. Therefore, even ifsuch a force as to tear the operation member 10 off upward is applied,it is possible to prevent the breakage of the first and secondstructures 310 and 410, peel-off between the electrode substrate 20 andeach of the structures 310 and 410, and the like.

Alternatively, as shown in FIG. 18B, the adhesion layer 13 may be formedin a display region of the flexible display 11, that is, in a regionincluding the center portion but excluding the outer circumferentialportion. As shown below, this allows the breakage of the flexibledisplay 11 or abnormal detection sensitivity to be suppressed.

FIGS. 19A, B is a schematic view showing a state where the flexibledisplay 11 is attached to the entire surface of the metal film 12,including the outer circumferential portion. It should be noted that inFIG. 19A, B, the adhesion layer 13 is not illustrated.

For example, as schematically shown in FIG. 19A, a wire, a driver, andthe like are temporarily provided to an outer circumferential portion 11a of the flexible display 11. In the case where there is a bulge or astep, if the outer circumferential portion 11 a is forcedly bonded, abreakage may be caused particularly in the outer circumferential portion11 a. Further, as in regions circled by broken lines in the figure, gapsare generated in boundary portions between the outer circumferentialportion 11 a and other regions, and abnormal detection sensitivity maybe caused.

Additionally, as schematically shown in FIG. 19B, also in the case wherea seal material or the like (not shown) is provided to the surface ofthe flexible display 11 and warpage or the like occurs, if the outercircumferential portion 11 a is forcedly bonded, the flexible display 11may be broken. Further, as in regions circled by broken lines in thefigure, abnormal detection sensitivity may be caused due to floating ofthe flexible display 11. In other words, if the outer circumferentialportion 11 a of the flexible display 11 is not forcedly bonded, thefailures described above can be suppressed.

Moreover, FIG. 20 is a schematic cross-sectional view showing anothermodified example of the adhesion layer 13. As shown in the figure, theadhesion layer 13 may be formed in a predetermined plane pattern. FIG.21 is a view showing examples of a plane pattern of the adhesion layer13. The adhesion layer 13 may have a column pattern as shown in FIG.21A, a stripe pattern as shown in FIG. 21B, or a lattice pattern shownin FIG. 21C. With the adhesion layer 13 having such a pattern, airbubbles can be prevented from being mixed into the adhesion layer 13when the flexible display 11 and the metal film 12 are bonded to eachother, and a yield ratio can be improved.

Additionally, in the case where the adhesion layer 13 has apredetermined plane pattern, the thickness of the adhesion layer 13along the Z-axis direction can be formed to be thinner than thethickness of the metal film 12. This allows the reliability of bondingof the flexible display 11 and the metal film 12 to be enhanced.Moreover, the predetermined pattern described above can be formed to befiner than the arrangement pattern of the first structures 310.Specifically, the length of each column in the case of the columnpattern or the length of each adjacent line in the case of the stripepattern may be formed to be shorter than the size of the adjacent firststructures 310, for example, to be one-tenth of the length or shorter.This can prevent the pattern of the adhesion layer 13 and the size ofthe first structures 310 from interfering and ununiformity orperiodicity in detection sensitivity from occurring.

Modified Example 2

In the first embodiment described above, the multiple first electrodewires 210 and the multiple second electrode wires 220 may be each formedof a single electrode wire or may be each formed of the multipleelectrode groups 21 w and 22 w, but the following configuration can alsobe provided.

FIG. 22A is a schematic plan view showing a configuration example of thefirst electrode wires 210. For example, each of the first electrodewires 210 include multiple unit electrode bodies 210 m and multiplecoupling portions 210 n that couple the multiple unit electrode bodies210 m to one another. Each of the unit electrode bodies 210 m includesmultiple sub-electrodes (electrode elements) 210 w. The multiplesub-electrodes 210 w are electrodes formed of multiple electrodeelements that are branched electrode wires, and have a regular orirregular pattern. FIG. 22A shows an example in which the multiplesub-electrodes 210 w have a regular pattern. In this example, themultiple sub-electrodes 210 w are linear conductive members extending inthe Y-axis direction and those conductive members are arrayed in astripe pattern. The coupling portions 210 n extend in the Y-axisdirection and couple the adjacent unit electrode bodies 210 m to eachother.

FIG. 22B is a schematic plan view showing a configuration example of thesecond electrode wires 220. For example, each of the second electrodewires 220 include multiple unit electrode bodies 220 m and multiplecoupling portions 220 n that couple the multiple unit electrode bodies220 m to one another. Each of the unit electrode bodies 220 m includesmultiple sub-electrodes (electrode elements) 220 w. The multiplesub-electrodes 220 w have a regular or irregular pattern. FIG. 22B showsan example in which the multiple sub-electrodes 220 w have a regularpattern. In this example, the multiple sub-electrodes 220 w are linearconductive members extending in the X-axis direction and thoseconductive members are arrayed in a stripe pattern. The couplingportions 220 n extend in the X-axis direction and couple the adjacentunit electrode bodies 220 m to each other.

The first and second electrode wires 210 and 220 are disposed tointersect such that the unit electrode bodies 210 m and the unitelectrode bodies 220 m are opposed to each other in the Z-axis directionand overlap when viewed in the Z-axis direction, and thus theintersection regions form the detection portions 20 s. It should benoted that the unit electrode bodies 210 m and 220 m are not limited tothe configurations described above, and unit electrode bodies havingvarious configurations can be adopted.

FIG. 23A to 23P is a schematic view showing shape examples of the unitelectrode bodies 210 m and 220 m. FIG. 23A to 23P shows examples of theunit electrode body 210 m, but the unit electrode body 220 m may havethose shapes.

FIG. 23A shows an example in which the unit electrode body 210 m isformed by an aggregate of multiple linear electrode patterns radiallyextending from the center portion. FIG. 23B shows an example in whichone of the radial linear electrodes shown in FIG. 23A is formed to bethicker than the other linear electrodes. This allows the amount ofcapacitance change on the thick linear electrode to be increased morethan that on the other linear electrodes. Further, FIGS. 23C and 23Dshows examples in which an annular linear electrode is disposed atsubstantially the center and linear electrodes are radially formed fromthe center. This allows the concentration of the linear electrodes atthe center portion to be suppressed and the generation of areduced-sensitivity region to be prevented.

FIG. 23E to 23H shows examples in which multiple linear electrodes eachformed into an annular or rectangular annular shape are combined to forman aggregate. This allows the electrode density to be adjusted and theformation of a reduced-sensitivity region to be suppressed. Further,FIGS. 23I to 23L shows examples in which multiple linear electrodes eacharrayed in the X-axis direction or the Y-axis direction are combined toform an aggregate. The adjustment of the shape, length, pitch, or thelike of the linear electrodes allows a desired electrode density to beobtained. Further, FIG. 23M to 23P shows examples in which linearelectrodes are disposed asymmetrically in the X-axis direction or theY-axis direction.

The shapes of the unit electrode bodies 210 m and 220 m of the first andsecond electrode wires 210 and 220 may be combined in two sets of thesame type or in two sets of different types out of the shapes shown inFIGS. 22A, 22B, and 23A to 23P. It should be noted that the shape of aportion other than the unit electrode bodies 210 m and 220 m, such asthe coupling portions 210 n and 220 n, is not particularly limited andmay be linear, for example.

Modified Example 3

In the first embodiment described above, the first structure 310 isdisposed at substantially the center of the detection portion 20 s, butthe first structure 310 is not limited thereto. For example, thedetection portion 20 s may be disposed to be opposed to the secondstructure 410, and the second structure 410 may be disposed atsubstantially the center of the detection portion 20 s.

FIGS. 24A, B is a schematic plan view showing arrangement examples ofthe first and second structures 310 and 410 according to this modifiedexample and the first electrode wires (X electrodes) 210 and the secondelectrode wires (Y electrodes) 220, and corresponding to FIGS. 12A, B.

FIG. 24A corresponds to FIG. 12A and shows an example in which thenumber of first structures 310 and the number of second structures 410are substantially the same. Further, in this modified example, thesecond structure 410 is disposed at substantially the center of thedetection portion 20 s. A pitch of the second structures 410 in theX-axis direction and the Y-axis direction is the same as a pitch of thedetection portion 20 s in the X-axis direction and the Y-axis direction.The pitch is P1. Further, the first structures 310 are disposed in thepitch P1, which is the same in the second structures 410, at regularintervals between the second structures 410 and between the detectionportions 20 s that are adjacent in an oblique direction formingapproximately 45° with the X-axis and Y-axis directions.

Further, FIG. 24B corresponds to FIG. 12B and shows an example in whichthe number of first structures 310 and the number of second structures410 are different from each other. In other words, the second structures410 are disposed in the pitch P1 at substantially the center of eachdetection portion 20 s, as in the example shown in FIG. 24A. On theother hand, the first structures 310 are different from FIG. 24A inarrangement and number and disposed in a pitch P2, which is ½ times ofthe pitch P1 of the second structures 410. When viewed in the Z-axisdirection, the first structures 310 are disposed so as to surround thecircumferences of the second structures 410 and the detection portions20 s. The first structures 310 are disposed in a larger number than thesecond structures 410, and thus the strength of the entire input device100 can be enhanced.

Further, FIGS. 25A, B is a schematic cross-sectional view showing astate of the modified example described above before and after the pointP on the first surface 110 is pressed downward in the Z-axis directionwith the operating element h. FIG. 25A shows a state before a press isactually performed and corresponds to FIG. 14. FIG. 25B shows a pressedstate and corresponds to FIG. 15.

For example, in the case where the point P above a first space portion330 p 0 is pressed downward, a region of the metal film 12 above thefirst space portion 330 p 0 is deflected downward, the first spaceportion 330 p is crushed in the Z-axis direction, and the metal film 12and the detection portion 20 s come close to each other. Moreover, firststructures 310 p 1 and 310 p 2 that are adjacent to the first spaceportion 330 p 0 also receive a force. With this force, regions connectedto the first structures 310 p 1 and 310 p 2 in the electrode substrate20 are also deflected downward, and the thickness of a second structure410 p 0 is also slightly reduced by elastic deformation in the Z-axisdirection. In other words, the detection portion 20 s located below theoperating element h and the conductive layer 50 come close to eachother.

As described above, also in this modified example in which the secondstructures 410 are opposed to the detection portions 20 s, a force canbe transmitted in the thickness direction by the first and secondstructures 310 and 410, and the electrode substrate 20 can be easilydeformed. Thus, as in the first embodiment, the input device 100according to this modified example can efficiently change a capacitanceof the detection portion 20 s and highly accurately detect a pressingforce and a pressing position.

Further, as shown in FIGS. 25A, B, the second support 40 may include alaminate structure including a base material 41, a structure layer 42provided on the surface (upper surface) of the base material 41, andmultiple bonding portions 441 formed at predetermined positions on thestructure layer 42. On the other hand, the first support 30 may notinclude such a laminate structure. This can enhance operability whilekeeping the strength of the input device 100 also in this modifiedexample.

Modified Example 4

FIG. 26 is a schematic cross-sectional view showing another modifiedexample of this embodiment. As shown in the figure, the operation member10 may include a protective film 14 that is disposed on the metal film12 to face the first support 30. In other words, the protective film 14is disposed to be opposed to the electrode substrate 20. The protectivefilm 14 may be an antioxidant resin film or the like, and formed on themetal film 12 by coating, for example. Providing such a protective film14 can prevent the metal film 12 from being corroded or broken.Therefore, the reliability of the metal film 12 can be enhanced, andfavorable detection sensitivity can be kept.

Modified Example 5

The electrode substrate 20 is formed as a laminate of the first wiringsubstrate 21, the second wiring substrate 22, and the adhesion layer 23therebetween, and the base material 31 of the first support 30 isdisposed on the first wiring substrate 21 via the adhesion layer 35, butthe configuration is not limited thereto. For example, the followingconfigurations may be provided.

Configuration Example 1

The input device 100 (sensor device 1) may include an insulating coverlayer instead of the base material 31 and the adhesion layer 35. Such acover layer is made of, for example, an insulating UV curable resin or athermoset resin, and the thickness may be several μm to several 100 μm.The cover layer may be a single layer or may include multiple layers.Further, the first structures 310 of the first support 30, the firstframe 320, and the first space portion 330 are disposed on the coverlayer. The first structures 310 and the first frame 320 can be formed bya screen printing method or a UV molding method, for example. Such aconfiguration can make the thickness of the electrode substrate 20 andthe first support 30 thinner and contribute to a reduction in thicknessof the input device 100.

Configuration Example 2

FIG. 27 is a schematic cross-sectional view of a main part, showing aconfiguration example 2 according to this modified example. As shown inthe figure, this configuration example includes an insulating layer 24instead of the first base material 211 and the adhesion layer 23. Inother words, the insulating layer 24 is formed on the second wiringsubstrate 22 including the second electrode wires 220, and the firstelectrode wires 210 are formed thereon. The insulating layer 24 may bemade of, for example, an insulating UV curable resin or a thermosetresin, and the thickness may be several μm to several 100 μm. Such aconfiguration can make the electrode substrate 20 thinner and contributeto a reduction in thickness of the entire input device 100. It should benoted that the input device 100 according to this configuration examplemay include a cover layer instead of the base material 31 and theadhesion layer 35, as described in the configuration example 1.

Configuration Example 3

FIGS. 28A, B is a schematic cross-sectional view of a main part, showinga configuration example 3 according to this modified example. As shownin FIG. 28A, an electrode substrate 20 according to this configurationexample includes one base material 211, and first electrode wires 210and second electrode wires 220 are formed on both surfaces of the basematerial 211. In other words, the base material 211 has a configurationin which two-layer electrodes are formed by both-side printing. In thiscase, as shown in FIG. 28A, a cover layer 25 may be formed on thesurface (lower surface) of the base material 211 on which the secondelectrode wires 220 are formed. The cover layer 25 may be made of, forexample, an insulating UV curable resin or a thermoset resin, and thethickness may be several μm to several 100 μm. Alternatively, as shownin FIG. 28B, an adhesion layer 23 and a second base material 221 may beformed on the lower surface of the first base material 211, both thesurfaces of which includes the first and second electrode wires 210 and220. Further, though not shown in the figure, a configuration in whichthe second support 40 is directly formed on the lower surface of thebase material 211 may be provided. It should be noted that the inputdevice 100 according to this configuration example may include a coverlayer instead of the base material 31 and the adhesion layer 35, asdescribed in the configuration example 1.

Configuration Example 4

FIGS. 29A, B is a schematic cross-sectional view of a main part, showinga configuration example 4 according to this modified example. As shownin the figure, an electrode substrate 20 according to this configurationexample includes a first wiring substrate 21 including first electrodewires 210 and a first base material 211, a second wiring substrate 22including second electrode wires 220 and a second base material 221, andan adhesion layer 23, but the orientation of the second wiring substrate22 with respect to the first wiring substrate 21 is different from thatof the configuration shown in FIG. 3 or the like. In other words, thesecond electrode wires 220 are not formed on the side facing theadhesion layer 23 but formed to face the second support 40. In thiscase, as shown in FIG. 29A, an insulating cover layer 25 may be formedon the lower surface of the second base material 221. Alternatively, asshown in FIG. 29B, an adhesion layer 252 and a third base material 251may be formed on the lower surface of the second base material 221.Further, though not shown in the figure, a configuration in which thesecond support 40 is directly formed on the lower surface of the secondbase material 221 may be provided. It should be noted that the inputdevice 100 according to this configuration example may include aninsulating cover layer instead of the base material 31 and the adhesionlayer 35, as described in the configuration example 1.

Configuration Example 5

FIG. 30 is a schematic cross-sectional view of a main part, showing aconfiguration example 5 according to this modified example. As shown inthe figure, an electrode substrate 20 is disposed such that theconfiguration described with reference to FIG. 3 or the like is turnedupside down. Further, the first support 30 does not include the basematerial 31, and the second support 40 includes the base material 41formed on the electrode substrate 20 side. In this case, as shown inFIG. 30, an adhesion layer 45 may be provided between the base material41 of the second support 40 and the first wiring substrate 21 of theelectrode substrate 20, and an adhesion layer may not be providedbetween the electrode substrate 20 and the first support 30. It shouldbe noted that this configuration example may be combined with theconfigurations described as the configuration examples 1 to 4 asappropriate. For example, the base material 41 and the adhesion layer 45can be the cover layer as described above.

Second Embodiment

FIG. 31 is a schematic cross-sectional view of an input device 100Aaccording to a second embodiment of the present technology. Aconfiguration other than an operation member 10A of the input device100A according to this embodiment is similar to that of the firstembodiment, and description thereof will be omitted as appropriate. FIG.31 is a view corresponding to FIG. 1 according to the first embodiment.

(Overall Configuration)

The input device 100A according to this embodiment includes a flexiblesheet 11A instead of the flexible display, and a sensor device 1 similarto that of the first embodiment. As will be described later, multiplekey regions 111A are disposed on the flexible sheet 11A, and the inputdevice 100A is used as a keyboard device as a whole.

(Input Device)

The flexible sheet 11A is formed of an insulating plastic sheet havingflexibility, which is made of PET (polyethylene terephthalate), PEN(polyethylene naphthalate), PMMA (polymethylmethacrylate), PC(polycarbonate), PI (polyimide), or the like. The thickness of theflexible sheet 11A is not particularly limited and is approximatelyseveral 10 μm to several 100 μm, for example.

It should be noted that the flexible sheet 11A is not limited to asingle-layer structure and may have a configuration of a laminate of twoor more sheets. In this case, in addition to the plastic sheet describedabove, an insulating plastic sheet having flexibility made of PET, PEN,PMMA, PC, PI, or the like may be laminated as a base material, forexample.

The flexible sheet 11A includes a first surface 110A as an operationsurface and a second surface 120A as a back surface of the first surface110A. On the first surface 110A, the multiple key regions 111A arearrayed. On the second surface 120A, a metal film 12 is laminated.

The flexible sheet 11A and the metal film 12 may be formed of acomposite sheet or the like in which metal foil is previously attachedto the surface of a resin sheet, or may be formed of a deposited film, asputtering film, or the like formed on the second surface 120A.Alternatively, the flexible sheet 11A and the metal film 12 may be acoating film of a conductive paste or the like that is printed on thesecond surface 120A.

Each of the key regions 111A corresponds to a keycap that is subjectedto a pressing operation by the user, and has a shape and sizecorresponding to the type of a key. Each of the key regions 111A may beprovided with an appropriate key indication. The key indication mayindicate the type of a key, a position (outline) of an individual key,or both of them. For the indication, an appropriate printing method suchas screen printing, flexographic printing, and gravure offset printingcan be adopted.

The first surface 110A has a form in which a groove portion 112A isformed around each of the key regions 111A. For formation of aconcave-convex surface corresponding to the key regions 111A, anappropriate processing technology such as press forming, etching, andlaser processing can be adopted. Alternatively, a flexible sheet 11Aincluding a concave-convex surface may be formed by a molding technologysuch as injection molding.

Further, the configuration of the flexible sheet 11A is not limited tothe example described above. For example, FIGS. 32A, B is a schematicview showing a modified example of the flexible sheet 11A. A flexiblesheet 11Aa shown in FIG. 32A shows an example in which a first surface110A is formed of a flat surface. In this case, each key region (notshown) may be described by printing or the like, or the flexible sheet11Aa may not include key regions and may be used as a touch sensor.Further, a flexible sheet 11Ab shown in FIG. 32B is formed by performingpress forming on the flexible sheet 11A, for example, and each of keyregions 111Ab is formed to be independently deformable in the verticaldirection (sheet thickness direction).

Further, the flexible sheet 11A may be made of a material havingconductivity, such as metal. This can make the metal film 12 unnecessaryand the operation member 10A thinner. In this case, the flexible sheet11A has a function of the metal film 12 as well and is connected to aground potential, for example.

In this embodiment, when a user performs a key input operation, the userpresses the center portion of the key region 111A. In this regard, firstand second structures 310 and 410 and detection portions 20 s can bedisposed as follows.

Arrangement Example 1

For example, as shown in FIG. 31, the first structure 310 of the firstsupport 30 may be disposed below the key region 111A. In this case, thedetection portion 20 s is disposed at a position overlapping with thefirst structure 310 when viewed in the Z-axis direction, and the secondstructure 410 is disposed below the groove portion 112A between thefirst structures 310 adjacent to each other.

In the arrangement example 1, the position above the first structure 310is pressed at the time of a key input operation. As described withreference to FIG. 15A, this allows each of the metal film 12 and theconductive layer 50 and the detection portion 20 s to come close to eachother and a capacitance change of the detection portion 20 s to beobtained.

Further, the shape of the first structure 310 is not limited to acolumnar body or the like as shown in FIG. 12, and may be disposed to bewall-like along the groove portion 112A, for example. In this case, eachsecond structure 410 is disposed along a boundary between the multiplekey regions 111A.

Arrangement Example 2

Alternatively, the first structure 310 may be disposed below the grooveportion 112A. In this case, the second structure 410 is disposed belowthe key region 111A between the first structures 310 adjacent to eachother. Further, the detection portion 20 s is disposed at a positionoverlapping with the first structure 310 when viewed in the Z-axisdirection.

In the arrangement example 2, as described with reference to FIG. 15B, aposition above the first space portion 330 is pressed at the time of akey input operation, and thus the metal film 12 and the detectionportion 20 s come close to each other. Further, the first structures310, which are adjacent to the first space portion 330 immediately belowthe operation position, are displaced downward and the electrodesubstrate 20 is deflected, and thus the second structure 410 is alsoslightly elastically deformed. Therefore, each of the metal film 12 andthe conductive layer 50 and the detection portion 20 s come close toeach other, and a capacitance change of the detection portion 20 s canbe obtained.

It should be noted that the arrangement of the detection portions 20 sis not limited to the above, and the detection portions 20 s may bedisposed to overlap with the second structures 410.

As described above, the control unit 60 includes the arithmetic unit 61and the signal generation unit 62 and is electrically connected to theelectrode substrate 20. Additionally, in this embodiment, the controlunit 60 is configured to be capable of generating information on aninput operation made on each of the multiple key regions 111A based onthe outputs of the multiple detection portions 20 s. In other words, thearithmetic unit 61 calculates an operation position in the XY coordinatesystem on the first surface 110 based on electrical signals (inputsignals) output from the first and second electrode wires 210 and 220 ofthe electrode substrate 20 and determines a key region 111A that isassigned to the operation position. The signal generation unit 62generates an operation signal corresponding to the key region 111A onwhich the press is detected.

The input device 100A is incorporated into an electronic apparatus suchas a laptop personal computer and a mobile phone and can thus be appliedas a keyboard device as described above. Additionally, the input device100A includes a communication unit (not shown), and may thus beelectrically connected to another electronic apparatus such as apersonal computer in a wired or wireless manner and capable ofperforming an input operation for controlling the electronic apparatus.

Further, the input device 100A can also be used as a pointing device asdescribed in the first embodiment. In other words, two or more thresholdvalues are set for an output of each detection portion 20 s, and thearithmetic unit 61 determines a touch operation or a push operation,thus achieving an input device that doubles as a pointing device and akeyboard.

Modified Example

FIG. 33 is an enlarged cross-sectional view showing an input device 100Aof a modified example according to this embodiment. The input device100A shown in the figure does not have a configuration in which multiplesecond structures 410 are each disposed between multiple firststructures 310 adjacent to each other, but has a configuration in whichat least part of the multiple first structures 310 is disposed to beopposed to at least part of the multiple second structures 410 in theZ-axis direction. Moreover, the first structures 310 and the secondstructures 410 that are disposed to be opposed to each other in theZ-axis direction are disposed to be opposed to the groove portions 112Ain the Z-axis direction and are disposed at boundaries between themultiple key regions 111A.

FIG. 34A is a plan view showing an arrangement example of the firststructures 310. FIG. 34B is a plan view showing an arrangement exampleof the second structures 410. In this modified example, as will bedescribed later, the multiple first structures 310 and the multiplesecond structures 410 are disposed to correspond to the arrangement ofthe multiple key regions 111A. Additionally, the multiple firststructures 310 have various types of shapes corresponding to thearrangement thereof, and the multiple second structures 410 also havevarious types of shapes corresponding to the arrangement thereof.Further, when viewed in the Z-axis direction, the multiple firststructures 310 and the multiple second structures 410 are configuredsuch that a first structure 310 e in the first structures 310 shown inFIG. 34A and a second structure 410 e in the second structures 410 shownin FIG. 34B overlap each other.

FIG. 35A is a plan view showing a configuration example of multiple Xelectrodes 210. FIG. 35B is a plan view showing a configuration exampleof multiple Y electrodes 220. As shown in FIG. 35A, each of the Xelectrodes 210 includes multiple unit electrode bodies 210 m, and theunit electrode bodies 210 m are connected to each other in the Y-axisdirection by electrode wires. Each of the unit electrode bodies 210 mincludes multiple sub-electrodes and is disposed to correspond to eachof the key regions 111A. On the other hand, as shown in FIG. 35B, the Yelectrodes 220 are formed of electrode groups 22 w each includingmultiple electrode wires extending in the X-axis direction. Anintersection region of each unit electrode body 210 m of the X electrode210 and each electrode group 22 w of the Y electrode forms a detectionportion 20 s, and the detection portion 20 s is formed to correspond toeach key region 111A. It should be noted that the configuration is notlimited to the configuration described above, and a configuration inwhich the X electrode 210 includes multiple electrode groups and the Yelectrode 220 includes multiple unit electrode bodies may be provided.

In this modified example, intersection points of the sub-electrodes inthe unit electrode bodies 210 m and electrode wires in the electrodegroup 22 w are densely disposed at the center portion of each of the keyregions 111A. This allows detection sensitivity when the key region 111Ais pressed to be improved.

FIG. 36 is an enlarged plan view showing an arrangement example of thefirst structures 310 and the second structures 410 and is a view showingone key region 111A. In the figure, the first structures 310 are denotedby reference symbols u1 to u10 and the second structures 410 are denotedby reference symbols s1 to s9, for convenience sake.

As shown in the figure, a first structure u9 and a second structure s8are disposed to be opposed to each other, and a first structure u10 anda second structure s4 are disposed to be opposed to each other, in theZ-axis direction on the sides indicated by chain double-dashed linesaround the key region 111A along the Y-axis direction. In such a manner,in a region in which the first structure 310 and the second structure410 are disposed to overlap each other in the Z-axis direction, adistance between each of the metal film 12 and the conductive layer 50and the electrode substrate 20 is hard to change, and detectionsensitivity as a sensor is low. Further, in the region, when a certainkey region 111A is pressed, the deformation of the flexible sheet 11A(metal film 12) and the electrode substrate 20 is hard to propagate toanother key region 111A. Therefore, the first structures u9 and u10 andthe second structures s8 and s4, which are opposed to each other in theZ-axis direction, respectively, are disposed around the key region 111A,and thus malfunctions between key regions 111A that are adjacentparticularly in the X-axis direction can be prevented.

It should be noted that first structures and second structures that areopposed to each other in the Z-axis direction may be disposed on a sidealong the X-axis direction around the key region 111A. Specifically, thefirst structures may be disposed above the second supports s1 to s3 ands5 to s7. In this case, malfunctions between key regions 111A that areadjacent in the Y-axis direction can be prevented.

Moreover, as shown in the figure, the multiple first structures u5 to u8are disposed within the key region 111A. The first structures u5 to u8disposed without overlapping with the second structures efficientlydeform the flexible sheet 11A (key region 111A) and the electrodesubstrate 20 as described above, and thus detection sensitivity withinthe key region 111A can be improved.

If only one first structure is disposed within the key region 111A, inthe case where a region distant from the first structure is pressed, theflexible sheet 11A and the electrode substrate 20A cannot be efficientlydeformed. In particular, in the case where a pressing operation is madewith an operating element having a small contact area, such as a clawand a stylus, there is a possibility that sensitivity varies dependingon the position in the key region 111A. In contrast to this, in thismodified example, the multiple first structures u5 to u8 aresymmetrically disposed in the key region 111A, and thus high detectionsensitivity can be kept irrespective of the pressing position in the keyregion 111A or the contact area of the operating element.

Moreover, intersection points of the sub-electrodes in the unitelectrode bodies 210 m and electrode wires in the electrode groups 22 wmay be densely disposed inside and in the vicinity of a region definedby the first structures u5 to u8 (region indicated by a dashed-dottedline of FIG. 36). This allows detection sensitivity when the key region111A is pressed to be improved more.

The second structure s9 is disposed at substantially the center of thekey region 111A. If no structure is disposed at the center portion ofthe key region 111A, the center portion tends to have a largedeformation amount in the flexible sheet 11A and the electrode substrate20, as compared to the circumferential portion. This has caused adifference in detection sensitivity between the center portion of thekey region 111A and the circumferential portion. In this regard, thesecond structure s9 is disposed at substantially the center of the keyregion 111A, and thus the detection sensitivity in the center portion ofthe key region 111A and the circumferential portion can be uniformlykept.

On the other hand, around the key region 111A, the first structures u1to u4 and the second structures s1 to s3 and s5 to s7 are disposedwithout overlapping each other. Those first and second structures u1 tou4, s1 to s3, and s5 to s7 are formed to be larger than the first andsecond structures u5 to u8 and s9, which are disposed within the keyregion 111A. This can enhance the adhesiveness between the first andsecond structures, and the electrode substrate 20, the flexible sheet11A, and the like and enhance the strength as the input device 100A.Further, this can suppress the deformation around the key region 111Aand prevent malfunctions.

Further, as shown in FIG. 36, the first and second structures disposedaround each of the key regions 111A are desirably spaced away from eachother. If the first and second structures surround the key region 111Awithout gaps, an internal pressure rises in the first space portion 330and the second space portion 430 in the key region 111A. This may causea slow restoration of the flexible sheet 11A and the electrode substrate20 from deformation and a reduction in detection sensitivity. In thisregard, disposing the first and second structures to be spaced away fromeach other can prevent the detection sensitivity from being reduced,without hindering air from moving in the first space portion 330 and thesecond space portion 430.

Third Embodiment

FIG. 37 is a schematic cross-sectional view of an electronic apparatus70B in which an input device 100B according to a third embodiment of thepresent technology is incorporated. A configuration other than anoperation member 10B of the input device 100B according to thisembodiment is similar to that of the first embodiment, and descriptionthereof will be omitted as appropriate.

In the input device 100B according to this embodiment, a part of acasing 720B of the electronic apparatus 70B forms a part of theoperation member 10B. In other words, the input device 100B includes anoperation region 721B that forms a part of the casing 720B, and a sensordevice 1 similar to that of the first embodiment. As the electronicapparatus 70B, for example, a personal computer or the like equippedwith a touch sensor can be applied.

The operation member 10B has a laminate structure of an operation region721B and a metal film 12. The operation region 721B includes a firstsurface 110B and a second surface 120B and is deformable. In otherwords, the first surface 110B is one surface of the casing 720B, and thesecond surface 120B is a back surface (inner surface) of the onesurface.

The operation region 721B may be made of the same material as otherregions of the casing 720B, for example, a conductive material such asan aluminum alloy and a magnesium alloy or a plastic material. In thiscase, the operation region 721B is formed to have a thickness in whichthe operation region 721B is deformable when a user makes a touchoperation or a push operation. Alternatively, the operation region 721Bmay be made of a material different from other regions of the casing720B. In this case, a material having small rigidity than the otherregions can be adopted.

Further, on the second surface 120B, the metal film 12 such as metalfoil, which is formed on a viscous adhesion layer 13, is formed. In thecase where the operation region 721B is made of a conductive material,the metal film 12 is unnecessary and the operation member 10B can bemade thinner. In this case, the operation region 721B also has afunction as the metal film 12 and is connected to a ground potential,for example.

As described above, the input device 100B according to this embodimentcan be formed using a part of the casing 720B made of a conductivematerial or the like. This is because, as described above, the inputdevice 100B does not detect an input operation using capacitive couplingbetween the operating element and the X and Y electrodes, but usescapacitive coupling between each of the metal film 12 and the conductivelayer 50 and the detection portion 20 s, the metal film 12 being pressedwith the operating element, the conductive layer 50 being opposed to themetal film 12. Therefore, according to the input device 100B, the numberof components of the electronic apparatus 70B can be reduced, andproductivity can be enhanced more.

Further, the input device 100B according to this embodiment includes thesensor device 1 similar to that of the first embodiment described aboveand can thus highly accurately detect an operation position and apressing force even for a minute pressing force. Therefore, according tothis embodiment, there are less limits on the material of the operationregion 721B, and the input device 100B having high detection sensitivitycan be provided.

Fourth Embodiment

FIG. 38A is a schematic cross-sectional view of an input device 100Caccording to a fourth embodiment of the present technology. FIG. 38B isa cross-sectional view showing a main part of the input device 100C inan enlarged manner. This embodiment is different from the firstembodiment in that the electrode substrate 20 electrostatically detectsa change in distance from each of the metal film 12 and the conductivelayer 50 based on the amount of capacitive coupling change in the XYplane. In other words, a Y electrode 220C includes an opposed portionthat is opposed to an X electrode 210C in an in-plane direction of anelectrode substrate 20C, and the opposed portion forms a detectionportion 20Cs.

The electrode substrate 20 includes a base material 211C on whichmultiple first electrode wires (X electrodes) 210C and multiple secondelectrode wires (Y electrodes) 220C are disposed, the multiple Xelectrodes 210C and Y electrodes 220C being disposed on the same plane.

With reference to FIGS. 39A, B, description will be given on an exampleof a configuration of the X electrodes 210C and the Y electrodes 220C.Here, an example is shown in which each of the X electrodes 210Cincludes multiple unit electrode bodies (first unit electrode bodies)210 m each having a pectinate shape and each of the Y electrodes 220Cincludes multiple unit electrode bodies (second unit electrode bodies)220 m each having a pectinate shape, and one unit electrode body 210 mand one unit electrode body 220 m form each detection portion 20Cs.

As shown in FIG. 39A, the X electrode 210C includes the multiple unitelectrode bodies 210 m, an electrode wire portion 210 p, and multipleconnection portions 210 z. The electrode wire portion 210 p is extendedin the Y-axis direction. The multiple unit electrode bodies 210 m aredisposed at constant intervals in the Y-axis direction. The electrodewire portion 210 p and the unit electrode bodies 210 m are disposed tobe spaced away from each other at predetermined intervals and areconnected by the connection portions 210 z.

As described above, the unit electrode bodies 210 m each have apectinate shape as a whole. Specifically, the unit electrode bodies 210m each include multiple sub-electrodes 210 w and a coupling portion 210y. The multiple sub-electrodes 210 w are extended in the X-axisdirection. Adjacent sub-electrodes 210 w are spaced away from each otherat predetermined intervals. One end of each sub-electrode 210 w isconnected to the coupling portion 210 y extended in the X-axisdirection.

As shown in FIG. 39B, the Y electrode 220C includes the multiple unitelectrode bodies 220 m, an electrode wire portion 220 p, and multipleconnection portions 220 z. The electrode wire portion 220 p is extendedin the X-axis direction. The multiple unit electrode bodies 220 m aredisposed at constant intervals in the X-axis direction. The electrodewire portion 220 p and the unit electrode bodies 220 m are disposed tobe spaced away from each other at predetermined intervals and areconnected by the connection portions 220 z. It should be noted that aconfiguration in which the connection portions 220 z are omitted and theunit electrode bodies 220 m are directly provided on the electrode wireportion 220 p may be adopted.

As described above, the unit electrode bodies 220 m each have apectinate shape as a whole. Specifically, the unit electrode bodies 220m each include multiple sub-electrodes 220 w and a coupling portion 220y. The multiple sub-electrodes 220 w are extended in the X-axisdirection. Adjacent sub-electrodes 220 w are spaced away from each otherat predetermined intervals. One end of each sub-electrode 220 w isconnected to the coupling portion 220 y extended in the Y-axisdirection.

As shown in FIG. 40A, in regions in which the unit electrode bodies 210m and the unit electrode bodies 220 m are mutually combined, therespective detection portions 20Cs are formed. The multiplesub-electrodes 210 w of the unit electrode bodies 210 m and the multiplesub-electrodes 220 w of the unit electrode bodies 220 m are alternatelyarrayed toward the Y-axis direction. In other words, the sub-electrodes210 w and 220 w are disposed to be opposed to each other in the in-planedirection of the electrode substrate 20C (for example, in the Y-axisdirection).

FIG. 40B is a cross-sectional view when viewed from the A-A direction ofFIG. 40A. The Y electrodes 220 are provided so as to intersect with theX electrodes 210 as in the first embodiment and formed on the same planeas the X electrode 210. In this regard, as shown in FIG. 40B, a regionin which the X electrode 210 and the Y electrode 220 intersect with eachother is formed such that each X electrode 210 and each Y electrode 220do not directly come into contact with each other. In other words, aninsulating layer 220 r is provided on the electrode wire portion 210 pof the X electrode 210. Jumper wiring 220 q is provided so as to stepover the insulating layer 220 r. The electrode wire portion 220 p iscoupled by the jumper wiring 220 q.

FIG. 41 is a schematic cross-sectional view for describing aconfiguration of the detection portion 20Cs according to thisembodiment. In the example shown in the figure, in the detection portion20Cs, a sub-electrode 210 w 1 and a sub-electrode 220 w 1, thesub-electrode 220 w 1 and a sub-electrode 210 w 2, the sub-electrode 210w 2 and a sub-electrode 220 w 2, the sub-electrode 220 w 2 and asub-electrode 210 w 3, and the sub-electrode 210 w 3 and a sub-electrode220 w 3 are capacitively coupled to each other. In other words, with thebase material 211C being as a dielectric layer, capacitances Cc11, Cc12,Cc13, Cc14, and Cc15 between the sub-electrodes are configured to bevariable in accordance with the capacitive coupling between each of themetal film 12 and the conductive layer 50 and the first and secondelectrode wires 210C and 220C including sub-electrodes.

The configuration described above can make the second base material ofthe electrode substrate and the adhesion layer unnecessary and make itpossible to contribute to a reduction in thickness of the input device100C. Further, the configuration described above allows a large numberof sub-electrodes to capacitively couple to each other and shorten adistance between the sub-electrodes capacitively coupled. This canincrease the amount of capacitive coupling of the input device 100C as awhole and improve the detection sensitivity.

Fifth Embodiment

An input device 100D according to a fifth embodiment of the presenttechnology is different from that of the first embodiment in that one ofthe X electrode 210 and the Y electrode 220 includes multiple electrodegroups and the other electrode includes a flat-plate-shaped electrode.

First Structural Example

FIG. 42 is a schematic cross-sectional view of the input device 100Daccording to this embodiment. As shown in the figure, the input device100D includes an operation member 10D, a conductive layer 50, anelectrode substrate 20D, a first support 30, and a second support 40.The conductive layer 50, the first support 30, and the second support 40each have substantially the same configuration as the first embodiment,but the operation member 10D and the electrode substrate 20D haveconfigurations different from those of the first embodiment.Specifically, the operation member 10D does not include a metal film.Further, in the electrode substrate 20D, multiple X electrodes (firstelectrode wires) 210D are flat-plate-shaped electrodes and are disposedon the operation member 10D side relative to multiple Y electrodes(second electrode wires) 220D. The multiple Y electrodes 220D eachinclude multiple electrode groups 22Dw. Further, the electrode substrate20D is configured to be capable of electrostatically detecting a changein distance from each of a conductive operating element such as a user'sfinger and the conductive layer 50.

FIG. 43 is a schematic plan view showing an arrangement example of thefirst and second structures 310 and 410, the X electrodes 210D, and theY electrodes 220D. As shown in the figure, each of the X electrodes 210Dis a strip-shaped electrode extending in the Y-axis direction. Each ofthe Y electrodes 220D extends in the X-axis direction and includesmultiple electrode groups 22Dw. The detection portion 20Ds is formed inan intersection region of each X electrode 210D and each Y electrode andformed to be opposed to each first structure 210, as in the firstembodiment.

As shown in FIG. 42, the X electrode 210D is connected to a drive-side(pulse-input side) terminal of the controller 710, for example, and canbe switched to a drive pulse potential in detection and to a groundpotential in standby state, for example. This allows a shield effect tobe exerted with respect to external noise (external electric field).This allows a shield effect to be kept with respect to external noisefrom the operation member 10D side and a metal film to be omitted, evenif the input device 100D has a configuration in which the operationmember 10D does not include a metal film. Therefore, it is possible toachieve simplification of the configuration and contribute toimprovement of productivity. It should be noted that X electrode 210Emay be connected to a ground potential irrespective of detection orstandby state.

Moreover, as in the first embodiment, the metal film 12 is provided tothe operation member 10 and connected to a ground potential, and thus astronger shield effect can be exerted. This can make the detectionportions 20Ds stable with respect to external noise and make it possibleto stably keep the detection sensitivity.

Second Structural Example

FIG. 44 is a schematic cross-sectional view of an input device 100Eaccording to this embodiment. As shown in the figure, the input device100E includes an operation member 10, a back plate 50E, an electrodesubstrate 20E, a first support 30, and a second support 40. Theoperation member 10, the first support 30, and the second support 40each have substantially the same configuration as the first embodiment,but this embodiment is different from the first embodiment in that theback plate 50E is provided instead of the conductive layer and in theconfiguration of the electrode substrate 20E.

The back plate 50E forms the lowermost part of the input device 100E,like the conductive layer according to the first embodiment, and isdisposed to be opposed to a metal film (conductive layer) 12 (secondsurface 120) in the Z-axis direction. The back plate 50E functions as asupport plate of the input device 100E and is formed to have higherbending rigidity than the operation member 10 and the electrodesubstrate 20E, for example. The material of the back plate 50E is notparticularly limited as long as a desired strength is obtained, and maybe a resin plate made of reinforced plastic, a metal plate, or the like.Moreover, as described on the conductive layer in the first embodiment,the back plate 50E may include step portions from the viewpoint ofenhancement of rigidity or may be formed to be mesh-like from theviewpoint of radiation performance.

The electrode substrate 20E includes multiple X electrodes (firstelectrode wires) 210E and multiple Y electrodes (second electrode wires)220E, as in the first embodiment. The Y electrodes 220E areflat-plate-shaped electrodes and are disposed on the back plate 50E siderelative to the multiple X electrodes 210E. The multiple X electrodes210E each include multiple electrode groups 21Ew. The electrodesubstrate 20E is configured to be capable of electrostatically detectinga change in distance from the metal film 12.

FIG. 45 is a schematic plan view showing an arrangement example of thefirst and second structures 310 and 410, the X electrodes 210E, and theY electrodes 220E. As shown in the figure, each of the X electrodes 210Eextends in the Y-axis direction and includes the multiple electrodegroups 21Ew. Each of the Y electrodes 220E is a wide strip-shapedelectrode extending in the X-axis direction. A detection portion 20Es isformed in an intersection region of each X electrode 210E and each Yelectrode and formed to be opposed to each first structure 210, as inthe first embodiment.

As shown in FIG. 44, the Y electrode 220E is connected to a drive-side(pulse-input side) terminal of the controller 710, for example, and canbe switched to a drive pulse potential in detection and to a groundpotential in standby state, for example. This allows a shield effect tobe exerted with respect to external noise (external electric field).This allows a shield effect to be kept with respect to external noisefrom the back plate 50E side and the conductive plate 50E to be omitted,even if the input device 100E has the back plate 50E as an insulator.Therefore, it is possible to provide a configuration with which thematerial selectivity of the back plate 50E is enhanced and which isadvantageous in terms of costs. It should be noted that the Y electrodes220E may be connected to a ground potential irrespective of detection orstandby state.

Moreover, forming the back plate 50E of a conductive plate andconnecting both of the Y electrodes 220E and the back plate 50E to aground potential allows a stronger shield effect to be exerted. This canmake the detection portions 20Es stable with respect to external noiseand make it possible to stably keep the detection sensitivity.

It should be noted that in the second structural example, the Yelectrodes 220E are each configured to be flat-plate-shaped and capableof detecting a change in distance between each of the detection portions20Es and the metal film 12. Thus, it is desirable to provide aconfiguration in which the distance between the detection portion 20Esand the metal film 12 can be largely changed and the second structures410 are opposed to the detection portions 20Es, as shown in FIG. 25.Such a configuration can provide larger detection sensitivity.

MODIFIED EXAMPLES Modified Example 1

FIG. 46 is a schematic plan view showing an electrode configurationaccording to a modified example of the input device 100D (firstconfiguration example). FIG. 46A shows a configuration example of the Xelectrodes 210D, and FIG. 46B shows a configuration example of the Yelectrodes 220D. As shown in FIGS. 46A, B, the X electrode 210D and theY electrode 220D may include unit electrode bodies 210Dm and unitelectrode bodies 220Dm, respectively. As shown in FIG. 46A, the unitelectrode bodies 210Dm of the X electrode 210D are each aflat-plate-shaped electrode, and as shown in FIG. 46B, the unitelectrode bodies 220Dm of the Y electrodes 220D are each formed ofmultiple sub-electrodes 220Dw. In this modified example, the multiplesub-electrodes 220Dw of each unit electrode body 220D functions as anelectrode group.

Modified Example 2

FIG. 47 is a schematic plan view showing an electrode configurationaccording to a modified example of the input device 100E (secondconfiguration example). FIG. 47A shows a configuration example of the Xelectrodes 210E, and FIG. 47B shows a configuration example of the Yelectrodes 220E. As shown in FIGS. 47A, B, the X electrode 210E and theY electrode 220E may include unit electrode bodies 210Em and unitelectrode bodies 220Em, respectively, as in the modified example 1. Asshown in FIG. 47A, the unit electrode bodies 210Em of the X electrode210E are each formed of multiple sub-electrodes 210Ew, and as shown inFIG. 47B, the unit electrode bodies 220Em of the Y electrode 220E areeach a flat-plate-shaped electrode. In this modified example, themultiple sub-electrodes 210Ew of each unit electrode body 210E functionsas an electrode group.

Other Modified Examples

In this embodiment, the configurations of the X electrodes 210D and 210Eand the Y electrodes 220D and 220E are not limited to those describedabove, and both of the X electrodes 210D and 210E and the Y electrodes220D and 220E may be formed of flat-plate-shaped electrodes.

Sixth Embodiment

FIG. 48A is a perspective view showing an example of the outerappearance of an input device 100F according to a sixth embodiment ofthe present technology. FIG. 48B is an enlarged cross-sectional viewwhen viewed from the B-B direction of FIG. 48A. The input device 100Faccording to the sixth embodiment has a cylindrical shape as a whole.Therefore, a first surface 110F as an input operation surface has acylindrical surface. Other configurations of the input device 100F aresimilar to those of the input device 100 according to the firstembodiment.

An electrode substrate 20F includes multiple detection portions 20Fsthat are two-dimensionally arrayed in an in-plane direction of thecylindrical shape. FIG. 48A shows an example in which the multipledetection portions 20Fs are two-dimensionally arrayed in acircumferential direction and an axial direction (height direction) ofthe electrode substrate 20F having the cylindrical shape. Further, inthe example shown in FIG. 48A, first and second frames 320F and 420F aredisposed in the circumferential direction of the upper and lower ends ofthe cylinder. This can enhance the strength of the entire input device100F.

As shown in FIG. 48B, the input device 100F according to this embodimenthas such a shape that the input device 100 of FIG. 1 is curved with thefirst surface 110 (110F) facing out. In other words, the input device100F includes an operation member 10F, a conductive plate 50F, anelectrode substrate 20F, a first support 30F, and a second support 40F,and is formed by those constituent elements curved into a cylindricalshape.

Even such an input device 100F can enhance the detection sensitivity ofthe first surface 110F at the time of an input operation, and can beused as a touch sensor or a keyboard device. It should be noted that theshape of the entire input device 100F is not limited to the cylindricalshape. For example, the shape may be a flattened cylindrical shape, andthe cross section may be a rectangular cylindrical shape. Further, FIG.48A shows an example in which the first and second frames 320F and 420Fare disposed only in the circumferential direction of the upper andlower ends of the cylinder, but the arrangement is not limited thereto.The first and second frames 320F and 420F may be disposed along alongitudinal direction (height direction of the cylinder). This can makeit possible to provide stronger support.

Modified Example 1

FIG. 49A is a perspective view showing an example of a configuration ofan input device 100F according to a modified example of the sixthembodiment of the present technology. The input device 100F according tothis modified example has a curved shape as a whole. In other words, theinput device 100F has a configuration of a curved rectangular inputdevice. Therefore, a first surface 110F as an input operation surfacehas a curved shape. Further, an electrode substrate (not shown) includesmultiple detection portions 20Fs that are two-dimensionally arrayed inan in-plane direction of the cylindrical shape. It should be noted thatthe entire shape of the input device 100F is not limited to the exampleshown in FIG. 49A and can be formed into a desired curved shape.

Modified Example 2

FIG. 49B is a perspective view showing an example of a configuration ofan input device 100F according to a modified example of the sixthembodiment of the present technology. In the input device 100F accordingto this modified example, two sensor devices each formed into asemicircular shape are coupled to each other to form one input device100F. In other words, the input device 100F includes two detectionregions 200 corresponding to the respective sensor devices and is formedinto a cylindrical shape as a whole. It should be noted that the numberof detection regions 200 is not limited and three or more detectionregions 200 may be included. Further, the shape of the entire inputdevice 100F is also not limited to the cylindrical shape. For example,the input device 100F may include four detection regions 200 and may beformed to have a rectangular cylindrical cross section such that thefour detection regions 200 form the respective surfaces.

Hereinabove, the embodiments of the present technology have beendescribed, but the present technology is not limited to the embodimentsdescribed above and can be variously modified without departing from thegist of the present technology as a matter of course.

For example, the input device may not include the metal film and maydetect a capacitance change of a detection portion due to capacitivecoupling between each of the operating element and the conductive layerand the X and Y electrodes. In this case, a flexible sheet (see secondembodiment) made of an insulating material can be used as an operationmember. With such a configuration as well, the first and second supportscan change a distance from each of the operating element and theconductive layer and the detection portion, to obtain an input devicewith high detection accuracy for an operation position and a pressingforce.

Further, in the embodiments described above, the detection portions aredisposed immediately below the first structures, but are not limitedthereto. For example, the detection portions may be formed to be opposedto the respective second structures or may be disposed at positionswhere the detection portions are not opposed to any of the first andsecond structures. Such configurations also allow highly accuratedetection of an operation position and a pressing force as in theembodiments described above.

In the embodiments described above, the detection portions each form acapacitive element of the mutual capacitance system, but may form acapacitive element of a self-capacitance system. In this case, an inputoperation can be detected based on the amount of capacitance changebetween each of the metal film and the conductive layer and an electrodelayer included in the detection portion.

In the embodiments described above, the first space portion is disposedbetween the multiple first structures, and the second space portion isdisposed between the multiple second structures, but the space portionsare not limited to this configuration. For example, a regioncorresponding to all or part of the multiple first and second spaceportions may be filled with an elastic material or the like. The elasticmaterial or the like for filling is not particularly limited as long asit does not hinder the electrode substrate, the operation member, andthe like from being deformed.

Further, the first and second supports 30 and 40 may not include thefirst and second frames 320 and 330.

Further, the input device is not limited to the flat-plate-shapedconfiguration or the configuration described in the sixth embodiment,and may be formed to have a plate shape having a first surface of anindefinite shape, for example. In other words, the sensor device of thepresent technology is flexible as a whole and thus a mounting methodwith a high degree of freedom is achieved.

It should be noted that the present technology can have the followingconfigurations.

(1) A sensor device, including:

a deformable sheet-shaped first conductive layer;

a second conductive layer that is disposed to be opposed to the firstconductive layer;

an electrode substrate that includes multiple first electrode wires andmultiple second electrode wires and is disposed to be deformable betweenthe first conductive layer and the second conductive layer, the multiplesecond electrode wires being disposed to be opposed to the multiplefirst electrode wires and intersecting with the multiple first electrodewires;

a first support that includes multiple first structures, the multiplefirst structures connecting the first conductive layer and the electrodesubstrate; and

a second support that includes multiple second structures, the multiplesecond structures connecting the second conductive layer and theelectrode substrate.

(2) A sensor device, including:

a deformable sheet-shaped first conductive layer;

a second conductive layer that is disposed to be opposed to the firstconductive layer;

an electrode substrate that includes multiple first electrode wires andmultiple second electrode wires, the multiple second electrode wiresbeing disposed to be opposed to the multiple first electrode wires andintersecting with the multiple first electrode wires, the electrodesubstrate being disposed to be deformable between the first conductivelayer and the second conductive layer and being capable ofelectrostatically detecting a change in distance from each of the firstconductive layer and the second conductive layer;

a first support that includes multiple first structures and a firstspace portion, the multiple first structures connecting the firstconductive layer and the electrode substrate, the first space portionbeing formed between the multiple first structures; and

a second support that includes multiple second structures and a secondspace portion, the multiple second structures being each disposedbetween the first structures adjacent to each other and connecting thesecond conductive layer and the electrode substrate, the second spaceportion being formed between the multiple second structures.

(3) The sensor device according to (1) or (2), in which

the electrode substrate further includes multiple detection portions,each of the multiple detection portions being formed in each ofintersection regions of the multiple first electrode wires and themultiple second electrode wires and having a capacitance variable inaccordance with a relative distance from each of the first conductivelayer and the second conductive layer.

(4) The sensor device according to (3), in which

the multiple detection portions are formed to be opposed to the multiplefirst structures.

(5) The sensor device according to (3), in which

the multiple detection portions are formed to be opposed to the multiplesecond structures.

(6) The sensor device according to any one of (1) to (5), in which

the first support includes a first frame, the first frame connecting thefirst conductive layer and the electrode substrate and being disposedalong a circumferential edge of the electrode substrate, and

the second support includes a second frame, the second frame connectingthe second conductive layer and the electrode substrate and beingdisposed to be opposed to the first frame.

(7) The sensor device according to any one of (1) to (6), in which

the second conductive layer includes a step portion.

(8) The sensor device according to (1), in which

the electrode substrate is configured to be capable of electrostaticallydetecting a change in distance from each of the first conductive layerand the second conductive layer.

(9) The sensor device according to (1) or (8), in which

the first support further includes a first space portion, the firstspace portion being formed between the multiple first structures.

(10) The sensor device according to any one of (1), (8), and (9), inwhich

the second support further includes a second space portion, the secondspace portion being formed between the multiple second structures.

(11) The sensor device according to any one of (1), (2), and (8) to(10), in which

each of the multiple first electrode wires includes multiple first unitelectrode bodies, the multiple first unit electrode bodies eachincluding multiple first sub-electrodes,

each of the multiple second electrode wires includes multiple secondunit electrode bodies, the multiple second unit electrode bodies eachincluding multiple second sub-electrodes and being opposed to themultiple first unit electrode bodies, and

the electrode substrate includes

-   -   a base material, the multiple first electrode wires and the        multiple second electrode wires being disposed on the base        material, and    -   multiple detection portions in which the multiple first        sub-electrodes of each of the first unit electrode bodies and        the multiple second sub-electrodes of each of the second unit        electrode bodies are opposed to each other in an in-plane        direction of the electrode substrate.        (12) An input device, including:

a deformable sheet-shaped operation member that includes a first surfaceand a second surface, the first surface receiving an operation by auser, the second surface being on the opposite side to the firstsurface;

a conductive layer that is disposed to be opposed to the second surface;

an electrode substrate that includes multiple first electrode wires andmultiple second electrode wires and is disposed to be deformable betweenthe operation member and the conductive layer, the multiple secondelectrode wires being disposed to be opposed to the multiple firstelectrode wires and intersecting with the multiple first electrodewires;

a first support that includes multiple first structures, the multiplefirst structures connecting the operation member and the electrodesubstrate; and

a second support that includes multiple second structures, the multiplesecond structures connecting the conductive layer and the electrodesubstrate.

(13) An input device, including:

a deformable sheet-shaped operation member that includes a first surfaceand a second surface, the first surface receiving an operation by auser, the second surface being on the opposite side to the firstsurface;

a first conductive layer that is disposed to be opposed to the secondsurface;

an electrode substrate that includes multiple first electrode wires andmultiple second electrode wires, the multiple second electrode wiresbeing disposed to be opposed to the multiple first electrode wires andintersecting with the multiple first electrode wires, the electrodesubstrate being disposed to be deformable between the operation memberand the first conductive layer and being capable of electrostaticallydetecting a change in distance from the first conductive layer;

a first support that includes multiple first structures and a firstspace portion, the multiple first structures connecting the operationmember and the electrode substrate, the first space portion being formedbetween the multiple first structures; and

a second support that includes multiple second structures and a secondspace portion, the multiple second structures being each disposedbetween the first structures adjacent to each other and connecting thefirst conductive layer and the electrode substrate, the second spaceportion being formed between the multiple second structures.

(14) The input device according to (12), in which

the operation member further includes a second conductive layer that isformed on the second surface, and

the detection substrate is capable of electrostatically detecting achange in distance from each of the first conductive layer and thesecond conductive layer.

(15) The input device according to (12) or (13), in which

the operation member includes a display unit.

(16) The input device according to (12) or (13), in which

the operation member includes multiple key regions.

(17) The input device according to (16), in which

the electrode substrate further includes multiple detection portions,each of the multiple detection portions being formed in each ofintersection regions of the multiple first electrode wires and themultiple second electrode wires and having a capacitance variable inaccordance with a relative distance from the first conductive layer.

(18) The input device according to (17), further including a controlunit that is electrically connected to the electrode substrate and iscapable of generating information on an input operation with respect toeach of the multiple key regions based on outputs of the multipledetection portions.(19) The input device according to any one of (16) to (18), in which

the multiple first structures are disposed along boundaries between themultiple key regions.

(20) The input device according to any one of (12) to (19), in which

the multiple first electrode wires are flat-plate-shaped electrodes andare disposed on the operation member side relative to the multiplesecond electrode wires, and

each of the multiple second electrode wires includes multiple electrodegroups.

(21) An input device, including:

a deformable sheet-shaped operation member that includes a firstsurface, a second surface, and a metal film, the first surface receivingan operation by a user, the second surface being on the opposite side tothe first surface, the metal film being formed on the second surface;

a back plate that is disposed to be opposed to the second surface;

an electrode substrate that includes multiple first electrode wires andmultiple second electrode wires, the multiple second electrode wiresbeing disposed to be opposed to the multiple first electrode wires andintersecting with the multiple first electrode wires, the electrodesubstrate being disposed to be deformable between the operation memberand the back plate and being capable of electrostatically detecting achange in distance from the metal film;

a first support that includes multiple first structures and a firstspace portion, the multiple first structures connecting the operationmember and the electrode substrate, the first space portion being formedbetween the multiple first structures; and

a second support that includes multiple second structures and a secondspace portion, the multiple second structures being each disposedbetween the first structures adjacent to each other and connecting theback plate and the electrode substrate, the second space portion beingformed between the multiple second structures.

(22) The input device according to (21), in which

the multiple second electrode wires are flat-plate-shaped electrodes andare disposed on the back plate side relative to the multiple firstelectrode wires, and

each of the multiple first electrode wires includes multiple electrodegroups.

(23) An electronic apparatus, including:

a deformable sheet-shaped operation member that includes a first surfaceand a second surface, the first surface receiving an operation by auser, the second surface being on the opposite side to the firstsurface;

a conductive layer that is disposed to be opposed to the second surface;

an electrode substrate that includes multiple first electrode wires andmultiple second electrode wires, the multiple second electrode wiresbeing disposed to be opposed to the multiple first electrode wires andintersecting with the multiple first electrode wires, the electrodesubstrate being disposed to be deformable between the operation memberand the conductive layer and being capable of electrostaticallydetecting a change in distance from the conductive layer;

a first support that includes multiple first structures and a firstspace portion, the multiple first structures connecting the operationmember and the electrode substrate, the first space portion being formedbetween the multiple first structures;

a second support that includes multiple second structures and a secondspace portion, the multiple second structures being each disposedbetween the first structures adjacent to each other and connecting theconductive layer and the electrode substrate, the second space portionbeing formed between the multiple second structures; and

a controller including a control unit that is electrically connected tothe electrode substrate and is capable of generating information on aninput operation with respect to each of the multiple operation membersbased on an output of the electrode substrate.

DESCRIPTION OF SYMBOLS

-   -   1 sensor device    -   100, 100A, 100B, 100C, 100D, 100E, 100F input device    -   10, 10A, 10B, 10D, 10F operation member    -   11 flexible display (display unit)    -   12 metal film (first conductive layer)    -   20, 20A, 20D, 20E, 20F electrode substrate    -   20 s, 20Cs, 20Ds detection portion    -   210 first electrode wire    -   220 second electrode wire    -   30, 30F first support    -   310 first structure    -   320 first frame    -   330 first space portion    -   40, 40F second support    -   410 second structure    -   420 second frame    -   430 second space portion    -   50, 50B, 50C conductive layer (second conductive layer)    -   50E, 50F back plate    -   51, 51B, 51C step portion    -   60 control unit    -   70, 70B electronic apparatus    -   710 controller

1. A sensor device, comprising: a deformable sheet-shaped firstconductive layer; a second conductive layer that is disposed to beopposed to the first conductive layer; an electrode substrate thatincludes multiple first electrode wires and multiple second electrodewires and is disposed to be deformable between the first conductivelayer and the second conductive layer, the multiple second electrodewires being disposed to be opposed to the multiple first electrode wiresand intersecting with the multiple first electrode wires; a firstsupport that includes multiple first structures, the multiple firststructures connecting the first conductive layer and the electrodesubstrate; and a second support that includes multiple secondstructures, the multiple second structures connecting the secondconductive layer and the electrode substrate.
 2. A sensor device,comprising: a deformable sheet-shaped first conductive layer; a secondconductive layer that is disposed to be opposed to the first conductivelayer; an electrode substrate that includes multiple first electrodewires and multiple second electrode wires, the multiple second electrodewires being disposed to be opposed to the multiple first electrode wiresand intersecting with the multiple first electrode wires, the electrodesubstrate being disposed to be deformable between the first conductivelayer and the second conductive layer and being capable ofelectrostatically detecting a change in distance from each of the firstconductive layer and the second conductive layer; a first support thatincludes multiple first structures and a first space portion, themultiple first structures connecting the first conductive layer and theelectrode substrate, the first space portion being formed between themultiple first structures; and a second support that includes multiplesecond structures and a second space portion, the multiple secondstructures being each disposed between the first structures adjacent toeach other and connecting the second conductive layer and the electrodesubstrate, the second space portion being formed between the multiplesecond structures.
 3. The sensor device according to claim 1, whereinthe electrode substrate further includes multiple detection portions,each of the multiple detection portions being formed in each ofintersection regions of the multiple first electrode wires and themultiple second electrode wires and having a capacitance variable inaccordance with a relative distance from each of the first conductivelayer and the second conductive layer.
 4. The sensor device according toclaim 3, wherein the multiple detection portions are formed to beopposed to the multiple first structures.
 5. The sensor device accordingto claim 3, wherein the multiple detection portions are formed to beopposed to the multiple second structures.
 6. The sensor deviceaccording to claim 1, wherein the first support includes a first frame,the first frame connecting the first conductive layer and the electrodesubstrate and being disposed along a circumferential edge of theelectrode substrate, and the second support includes a second frame, thesecond frame connecting the second conductive layer and the electrodesubstrate and being disposed to be opposed to the first frame.
 7. Thesensor device according to claim 1, wherein the second conductive layerincludes a step portion.
 8. The sensor device according to claim 1,wherein the electrode substrate is configured to be capable ofelectrostatically detecting a change in distance from each of the firstconductive layer and the second conductive layer.
 9. The sensor deviceaccording to claim 1, wherein the first support further includes a firstspace portion, the first space portion being formed between the multiplefirst structures.
 10. The sensor device according to claim 1, whereinthe second support further includes a second space portion, the secondspace portion being formed between the multiple second structures. 11.The sensor device according to claim 1, wherein each of the multiplefirst electrode wires includes multiple first unit electrode bodies, themultiple first unit electrode bodies each including multiple firstsub-electrodes, each of the multiple second electrode wires includesmultiple second unit electrode bodies, the multiple second unitelectrode bodies each including multiple second sub-electrodes and beingopposed to the multiple first unit electrode bodies, and the electrodesubstrate includes a base material, the multiple first electrode wiresand the multiple second electrode wires being disposed on the basematerial, and multiple detection portions in which the multiple firstsub-electrodes of each of the first unit electrode bodies and themultiple second sub-electrodes of each of the second unit electrodebodies are opposed to each other in an in-plane direction of theelectrode substrate.
 12. An input device, comprising: a deformablesheet-shaped operation member that includes a first surface and a secondsurface, the first surface receiving an operation by a user, the secondsurface being on the opposite side to the first surface; a firstconductive layer that is disposed to be opposed to the second surface;an electrode substrate that includes multiple first electrode wires andmultiple second electrode wires and is disposed to be deformable betweenthe operation member and the conductive layer, the multiple secondelectrode wires being disposed to be opposed to the multiple firstelectrode wires and intersecting with the multiple first electrodewires; a first support that includes multiple first structures, themultiple first structures connecting the operation member and theelectrode substrate; and a second support that includes multiple secondstructures, the multiple second structures connecting the conductivelayer and the electrode substrate.
 13. An input device, comprising: adeformable sheet-shaped operation member that includes a first surfaceand a second surface, the first surface receiving an operation by auser, the second surface being on the opposite side to the firstsurface; a conductive layer that is disposed to be opposed to the secondsurface; an electrode substrate that includes multiple first electrodewires and multiple second electrode wires, the multiple second electrodewires being disposed to be opposed to the multiple first electrode wiresand intersecting with the multiple first electrode wires, the electrodesubstrate being disposed to be deformable between the operation memberand the conductive layer and being capable of electrostaticallydetecting a change in distance from the conductive layer; a firstsupport that includes multiple first structures and a first spaceportion, the multiple first structures connecting the operation memberand the electrode substrate, the first space portion being formedbetween the multiple first structures; and a second support thatincludes multiple second structures and a second space portion, themultiple second structures being each disposed between the firststructures adjacent to each other and connecting the conductive layerand the electrode substrate, the second space portion being formedbetween the multiple second structures.
 14. The input device accordingto claim 12, wherein the operation member further includes a secondconductive layer that is formed on the second surface, and the electrodesubstrate is capable of electrostatically detecting a change in distancefrom each of the first conductive layer and the second conductive layer.15. The input device according to claim 14, wherein the operation memberincludes a display unit.
 16. The input device according to claim 12,wherein the operation member includes multiple key regions.
 17. Theinput device according to claim 16, wherein the electrode substratefurther includes multiple detection portions, each of the multipledetection portions being formed in each of intersection regions of themultiple first electrode wires and the multiple second electrode wiresand having a capacitance variable in accordance with a relative distancefrom the first conductive layer.
 18. The input device according to claim17, further comprising a control unit that is electrically connected tothe electrode substrate and is capable of generating information on aninput operation with respect to each of the multiple key regions basedon outputs of the multiple detection portions.
 19. The input deviceaccording to claim 16, wherein the multiple first structures aredisposed along boundaries between the multiple key regions.
 20. Theinput device according to claim 12, wherein the multiple first electrodewires are flat-plate-shaped electrodes and are disposed on the operationmember side relative to the multiple second electrode wires, and each ofthe multiple second electrode wires includes multiple electrode groups.21. An input device, comprising: a deformable sheet-shaped operationmember that includes a first surface, a second surface, and a conductivelayer, the first surface receiving an operation by a user, the secondsurface being on the opposite side to the first surface, the conductivelayer being formed on the second surface; a back plate that is disposedto be opposed to the second surface; an electrode substrate thatincludes multiple first electrode wires and multiple second electrodewires and is disposed to be deformable between the operation member andthe back plate, the multiple second electrode wires being disposed to beopposed to the multiple first electrode wires and intersecting with themultiple first electrode wires; a first support that includes multiplefirst structures, the multiple first structures connecting the operationmember and the electrode substrate; and a second support that includesmultiple second structures, the multiple second structures connectingthe back plate and the electrode substrate.
 22. The input deviceaccording to claim 21, wherein the multiple second electrode wires areflat-plate-shaped electrodes and are disposed on the back plate siderelative to the multiple first electrode wires, and each of the multiplefirst electrode wires includes multiple electrode groups.
 23. Anelectronic apparatus, comprising: a deformable sheet-shaped operationmember that includes a first surface and a second surface, the firstsurface receiving an operation by a user, the second surface being onthe opposite side to the first surface; a conductive layer that isdisposed to be opposed to the second surface; an electrode substratethat includes multiple first electrode wires and multiple secondelectrode wires, the multiple second electrode wires being disposed tobe opposed to the multiple first electrode wires and intersecting withthe multiple first electrode wires, the electrode substrate beingdisposed to be deformable between the operation member and theconductive layer and being capable of electrostatically detecting achange in distance from the conductive layer; a first support thatincludes multiple first structures and a first space portion, themultiple first structures connecting the operation member and theelectrode substrate, the first space portion being formed between themultiple first structures; a second support that includes multiplesecond structures and a second space portion, the multiple secondstructures being each disposed between the first structures adjacent toeach other and connecting the conductive layer and the electrodesubstrate, the second space portion being formed between the multiplesecond structures; and a controller including a control unit that iselectrically connected to the electrode substrate and is capable ofgenerating information on an input operation with respect to each of themultiple operation members based on an output of the electrodesubstrate.